Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

The Proton Magnetic Resonance Study for Hydrogen Behavior in Three Hydrogenated Silicon Films

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Hydrogen Bonding in Hydrogenated Amorphous Silicon Thin Films Prepared at Different Precursor Gas Temperatures with Undiluted Silane

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Investigation of the microstructure and optical properties of hydrogenated polymorphous silicon films prepared with pure silane

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Bonded Hydrogen in Nanocrystalline Silicon Photovoltaic Materials: Impact on Structure and Defect Density

Structure and Electronic States in A-Si:H Thin Films

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Microstructure, vacancies and moments of nuclear magnetic resonance of hydrogenated amorphous silicon

Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si 1− X C X :H Films

Effect of Hydrogen Treatment Upon Silicon Surface Investigated with the Multiple Internal Reflection Infrared Spectroscopy

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Effect of Silane/hydrogen Ratio on Microcrystalline Silicon Thin Films by Remote Inductively Coupled Plasma

Resonant Raman Scattering in Hydrogenated Amorphous Silicon Films

Structure Of Nc-Si : H Films