Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Visible Light Emission From Single Layer Si Nanodots Fabricated By Laser Irradiation Method

Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics

High Density Si Nanodots-Fabrication and Properties

Formation and properties of high density Si nanodots

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

An approach to obtain single layer of nanostructured Si by laser irradiation on ultrathin amorphous Si films

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

Enhanced Electron Field Emission from Dense Si Nano-Dots Prepared by Laser Crystallization of Ultrathin Amorphous Si Films

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Light Emission from Si Nanoclusters Formed at Low Temperatures

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Electroluminescence with Micro-Watt Output from Ultra-Small Sized Si Quantum Dots/amorphous SiO2 Multilayers Prepared by Laser Crystallization Method

Electroluminescent Devices Based on Amorphous SiN/Si Quantum Dots/amorphous SiN Sandwiched Structures

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Fabrication and Short-Wavelength Light Emission of Si Nanowires Grown Via Quasi Solid–liquid–solid Mechanism

Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals