Abstract:Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

Formation of Coupled Three-Dimensional Gesi Quantum Dot Crystals

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Optical Properties of Coupled Three-Dimensional Ge Quantum Dot Crystals

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Optical properties of Ge/Si quantum dot superlattices

Three-dimensional Si/Ge quantum dot crystals

Si-Based Microcavity Devices With Ge Quantum Dots

Twinned Silicon and Germanium Nanocrystals: Formation, Stability and Quantum Confinement

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

An Array Of Sige Nanodisks With Ge Quantum Dots On Bulk Si Substrates Demonstrating A Unique Light-Matter Interaction Associated With Dual Coupling

Factors Influencing Epitaxial Growth of Three-Dimensional Ge Quantum Dot Crystals on Pit-Patterned Si Substrate.

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.

Interface Interdiffusion Intensified by Formation of Quantum Dots

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Coupling of quantum-dot light emission with a three-dimensional photonic-crystal nanocavity

Coupling Induced Subband Structures And Collective Single Electron Behavior In A Single Layer Si Quantum Dot Array

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si