Abstract:InAs quantum dots (QD) made by self-assembled growth naturally have a random spatial and large spectral distribution. However the spatial and spectral profile of an optical cavity mode are highly predictable. To achieve the maximum interaction of single QD spontaneous emission (SE) with a cavity mode, QDs should ideally be spatially located in the cavity mode, but well isolated from nearby nonradiative surface recombination. To solve this issue, we have developed a patterned regrowth technique to place QDs near the antinode of a cavity mode. We show that the regrowth process does not affect the QDs optical properties while maintaining reasonable cavity quality factors. The PL signature of our QDs is discussed. We identify the single excitons, charged excitons and bi-excitions. Their relative intensities are decided by the excessive energy of free carriers and tunable by the sample temperature. In our research, we see strong evidence of disk sizing effect, which provide additional method to control the QD density besides material deposition and growth temperature. With this additional tunability, the QD density can be adjusted to produce low numbers of QDs (1 similar to 3 dots) per disk, so the optimal coupling of a single QD with a single cavity mode is quite plausible.

Optical Properties of Coupled Three-Dimensional Ge Quantum Dot Crystals

Formation of Coupled Three-Dimensional Gesi Quantum Dot Crystals

Tuning Quantum Dot States with Optical Fields

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Optical properties of Ge/Si quantum dot superlattices

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Optical Phonons in Self-Assembled Ge Quantum Dot Superlattices: Strain Relaxation Effects

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Optical study of Ge quantum dots and infrared photodetectors

Optical Transitions Inpbte∕cdtequantum Dots

Coupling of quantum-dot light emission with a three-dimensional photonic-crystal nanocavity

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Enhanced light emission from Ge quantum dots in photonic crystal ring resonator.

Optical And Structural Investigation Of Stacked Ge Quantum Dots

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Optical Study of Strongly Coupled Cdse Quantum Dots

Spontaneous Emission Modulation of Colloidal Quantum Dots Via Efficient Coupling with Hybrid Plasmonic Photonic Crystal

Tuning the Optical Properties in CsPbBr3 Quantum Dot-Doped Glass by Modulation of Its Network Topology

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Factors Influencing Epitaxial Growth of Three-Dimensional Ge Quantum Dot Crystals on Pit-Patterned Si Substrate.