Abstract:The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices were fabricated by 0.13 mu m node CMOS technology. The surface-nitrided Si-NCs were formed in-situ by low-pressure chemical vapor deposition and followed by nitridation treatment in NH3 ambient. It is found that the nitridation treatment not only enhances the control effect of gate voltage on channel carriers by passivation of the Si-NCs surface defects but also suppresses releasing of the stored carriers among the neighboring Si-NCs and leakage from Si-NCs to channel through the tunneling oxide by a silicon nitride cover layer acted as potential barrier. Consequently, the storage carriers are fully discrete in the Si-NCs, which are different from that in the conventional poly-crystal Si or SONOS floating gate NVM devices. The surface-nitrided Si-NCs NVM devices show lower subthreshold swing value of 0.13V/decade, faster P/E speed characteristics of 1 mu s at +/- 7V, and good retention characteristics at room temperature. Furthermore, due to the improvement of the tunneling oxide quality by nitridation treatment, the stable memory window of 1.7V has been kept after 10(7) P/E cycles, showing superior endurance characteristics with the good retention characteristics. Our fabrication of surface-nitrided Si-NCs floating gate NVM is compatible with the standard CMOS technology, which may be employed in the 3-D NAND technology to further improve the device performance. (C) 2016 AIP Publishing LLC.

Characteristics of Narrow Channel Mosfet Memory Based on Silicon Nanocrystals

Narrow Channel MOSFET Memory Based on Silicon Nanocrystals and Charge Storage Characteristics

Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

Silicon Nano-Crystals Based Mos Memory and Effects of Traps on Charge Storage Characteristics

Performance and reliability feature of nanocrystal memory devices

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory

Operation of Nanocrystalline-Silicon-based Few-Electron Memory Devices in the Light of Electron Storage, Ejection, and Lifetime Characteristics

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

Carbon Nanotube Based Non-Volatile Memory and Charge Sensors

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

p-Channel Ge/Si Hetero-Nanocrystal Based MOSFET Memoryand Its Logic Array

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Hole Storage Characteristics in Ge/Si Hetero-Nanocrystal-Based Memories

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories