Abstract:Carbon nanotubes are regarded promising building blocks for the future nanoelectronics. High performance transistors and integrated circuits based on semiconducting CNT thin films, e.g., CMOS type 4-bit adder, CNT computer, flexible sensor etc., have been reported. These progresses demonstrate the CNT transistor technology is being pushed to practical application. For real circuits applications, high Ion/Ioff ratio with low Ioff for a transistor are required in high speed and low power consumption integrated circuits. However, the switching behavior of most reported CNT thin film transistors are not good enough. Due to the intrinsic ambipolarity of CNTs, the Ioff values are usually higher than hundreds of nano Ampe and the Ion/Ioff ratio is decreased to less than 102 at relatively high source/drain bias voltages (e.g. 1V). Though the switching behavior of the FETs based on individual CNTs can be improved by either special design of the device geometry or chemical doping, these methods do not work well in CNT thin film transistors. In this work, we improved the performance of CNT thin film transistors by combining the asymmetric gate design and chemical doping. In this way, the Ioff was suppressed while the Ion was increased at the mean time. Thus the Ion/Ioff ratio was increased by ~2 orders of magnitude when compared with normally designed top-gate device. Moreover, the devices showed better subthreshold swing (SS) and the threshold voltage (Vth) was closer to zero than normal devices. These improvements are benefit to more complicated circuits design, and our method is applicable for the emerging nanodevices.

Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors

Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Adjustable Hydrazine Modulation of Single-Wall Carbon Nanotube Network Field Effect Transistors from P-Type to N-Type

A Photoinduced Electrostatic Doping Effect in Carbon Nanotube Field-Effect Transistors

Piperidine Induced Polarity Conversion in Single-Walled Carbon Nanotube Field Effect Transistors

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Charge transfer at carbon nanotube-graphene van der Waals heterojunctions.

Charge-Transport Behavior in Aligned Carbon Nanotubes: A Quantum-Chemical Investigation

On/Off Ratio Improvement of Carbon Nanotube Thin Film Transistors by Combining Asymmetric Gate Design and Chemical Doping

Mechano-switching devices from carbon wire-carbon nanotube junctions

Towards Quantifying the electrostatic transduction mechanism in carbon nanotube molecular sensors

Interaction of solid organic acids with carbon nanotube field effect transistors

Ambipolarity Suppression of Carbon Nanotube Thin Film Transistors

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Carbon Nanotube Electronics: Recent Advances

Controlling the electronic transport through the carbon nanotube junction by local electronic environment

Optically Enhanced Charge Transfer Between C60 and Single-Wall Carbon Nanotubes in Hybrid Electronic Devices.

Electrostatic Engineering of Nanotube Transistors for Improved Performance

Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films

Charge transport in semiconducting carbon nanotube networks