Abstract:This work demonstrates a novel negative photoconductance (NPC) detector based on organic‐gated carbon nanotube field‐effect transistor. With the light‐controlled electrostatic coupling mechanism, the NPC device shows high responsivity (72.6 A W−1 at 880 nm), fast response (7 ms), and good stability. Besides, gate‐tunable switching between NPC and positive photoconductance (PPC) is observed, which is promising for future multifunctional optoelectronic systems. Negative photoconductance (NPC) detectors have attracted continuous attention for constructing advanced and novel optoelectronic devices, including reconfigurable image sensors and optosynaptic systems, especially by combining NPC with positive photoconductance (PPC). However, NPC devices suffer from much lower photosensitivity, slower response speed, and poor stability, especially in the infrared range. In this work, controllable NPC detectors based on organic‐gated carbon nanotube field‐effect transistors (OG‐CNT FETs) are reported and the strong influence of light‐induced electrostatic doping on the nonconventional photoresponse is demonstrated. The PM6/Y6‐based heterojunction allows efficient near‐infrared light absorption and facilitates exciton diffusion. By introducing a floating gate structure with an ultrathin dielectric layer, the OG‐CNT FET shows an enhanced NPC effect owing to in situ signal amplification. Compared to other device configurations, the optimal OG‐CNT FETs exhibit high responsivity of 72.6 A W−1 at 880 nm, along with improved response/recovery times of 7 and 5 ms. Impressively, gate‐tunable switching between NPC and PPC is observed under the same light illumination. The reversible switching can be attributed to the competition between the light‐controlled electrostatic coupling and the PM6/Y6 photovoltaic effect, which offers a new approach to achieve bidirectional photoresponses and paves the way for the development of future multifunctional optoelectronic systems.

A Photoinduced Electrostatic Doping Effect in Carbon Nanotube Field-Effect Transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

The Electrochemical Carbon Nanotube Field-Effect Transistor

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Photoinduced modulation and the effect of CNT loading on field effect transistor characteristics of CNT/ZnO/PVDF composite

Electrostatic Doping-Induced Phonon Shift of Metallic Single-Wall Carbon Nanotubes

Carbon Nanotube Electronics: Recent Advances

Ultrahigh and Tunable Negative Photoresponse in Organic‐Gated Carbon Nanotube Film Field‐Effect Transistors

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

PN junction and band to band tunneling in carbon nanotube transistors at room temperature

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors

Towards Quantifying the electrostatic transduction mechanism in carbon nanotube molecular sensors

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics

Gate‐Controlled Photoresponse in an Individual Single‐Walled Carbon Nanotube Modified with a Fluorescent Protein

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Doping-free Carbon Nanotube Optoelectronic Devices

Photo-Activated Interaction Between P3HT and Single-Walled Carbon Nanotubes Studied by Means of Field-Effect Response

Controllable Photoelectron Transfer in CdSe Nanocrystal-Carbon Nanotube Hybrid Structures.