M. Krueger,M. R. Buitelaar,T. Nussbaumer,C. Schoenenberger,L. Forro
Abstract:We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage the NTs are hole doped in air with E_F ? 0.3-0.5 eV, corresponding to a doping level of ? 10^{13} cm^{-2}. Hole-doping increases in the electrolyte. This hole doping (oxidation) is most likely caused by the adsorption of oxygen in air and cations in the electrolyte.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **To study the electric - field effect of carbon nanotubes (CNTs) in electrolytes, especially to regulate the conductive properties of multi - walled carbon nanotubes (MWNTs) and the change of Fermi level (\(E_F\)) through electrochemical gating**. Specifically, the author hopes to explain the following problems through experiments and theoretical models:
1. **How to significantly change the resistance of carbon nanotubes through electrochemical gating (liquid - ion gating)**: Is electrochemical gating more effective compared to the traditional back - gate?
2. **The doping behavior of carbon nanotubes in different environments (such as air and electrolytes)**: Especially in electrolytes, how does the Fermi level of carbon nanotubes change and what are the reasons for this change?
3. **The regulation mechanism of the electrochemical gate on the Fermi level of carbon nanotubes**: Why can carbon nanotubes be tuned from p - type to n - type by applying a gate voltage in electrolytes?
### Main findings of the paper
1. **The effect of the electrochemical gate far exceeds that of the traditional back - gate**:
- In electrolytes, the liquid - ion gate is very sensitive to the resistance change of carbon nanotubes, and its effect is more than 200 times stronger than that of the traditional back - gate.
- For example, in the LiClO₄ electrolyte, the rate of change of resistance with gate voltage \(\frac{dR}{dU_g}\) can reach 2.5 Ω/V, while it is 570 Ω/V when using the back - gate in air.
2. **The doping behavior of carbon nanotubes in electrolytes**:
- Carbon nanotubes show p - type doping in air, and the Fermi level \(E_F\) is about - 0.3 to - 0.5 eV, corresponding to a hole doping concentration of about \(10^{13}\) cm⁻².
- After being immersed in the LiClO₄ electrolyte, the Fermi level further moves in the negative direction, reaching a maximum of about - 1 eV, indicating stronger hole doping.
- The reason for doping may be that the ClO₄⁻ ions in the electrolyte are adsorbed on the surface of carbon nanotubes, resulting in charge transfer and partial oxidation of carbon nanotubes (hole doping).
3. **The regulation mechanism of the electrochemical gate on the Fermi level**:
- Applying a voltage through the electrochemical gate can significantly change the Fermi level \(E_F\) of carbon nanotubes, thereby achieving the transition from p - type to n - type.
- When the gate voltage \(U_g\) reaches a certain specific value \(U_0\), the resistance of carbon nanotubes reaches the maximum value, and at this time the Fermi level \(E_F = 0\), that is, it is at the charge neutral point (CNP).
- This phenomenon can be explained by the series model of the double - layer capacitance \(C_g\) and the internal capacitance \(C_{NT}\) of carbon nanotubes, where \(C_g\gg C_{NT}\), so \(E_F\approx e(U_g - U_0)\).
### Model and theoretical analysis
In order to understand these experimental results, the author proposes a theoretical model, mainly considering the following points:
- **Density of states (DOS) and conductivity**: Assuming that the outer shell of carbon nanotubes is the main contributor, using the density of states formula of a single graphite layer \(N^\ast=\frac{2|E_F|}{\pi (\hbar v_F)^2}\), and introducing a parameter \(E_c\) to describe the band structure correction caused by temperature and adsorbates.
- **Capacitance model**: Through the series relationship between the geometric capacitance \(C_g\) and the chemical capacitance \(C_{NT}\), the relationship between the Fermi level \(E_F\) and the gate voltage \(U_g\) is derived as \(e\frac{\partial U_g}{\partial E_F}=1+\frac{C_{NT}(E_F)}{C_g}\).
- **Fitting of experimental data**: By fitting the experimental data, the key parameters \(E_c\approx0.12\) eV and \(A:=\frac{C_g}{C_0}\approx10\) are obtained, verifying the validity of the model.
In summary, this paper combines experiments and theory.