Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

Fabrication of All‐Carbon Nanotube Electronic Devices on Flexible Substrates Through CVD and Transfer Methods

Transferable thin films of pristine carbon nanotubes.

Continuous Fabrication of Meter-Scale Single-Wall Carbon Nanotube Films and Their Use in Flexible and Transparent Integrated Circuits.

Flexible high-performance carbon nanotube integrated circuits

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Fabrication of Carbon Nanotubes on Interdigitated Metal Electrode for Switchable Nanophotonic Devices

Transfer printing approach to all-carbon nanoelectronics

Fabrication and Testing of Solution-Processed Carbon Nanotube Thin Film Transistor

Wafer Scale Fabrication Of Carbon Nanotube Thin Film Transistors With High Yield

Fabrication of Thin-Film Transistor Based on Self-Assembled Single-Walled Carbon Nanotube Network

Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film

Fabrication and Electrical Properties of All-Printed Carbon Nanotube Thin Film Transistors on Flexible Substrates

Selective Fabrication of Quasi-Parallel Single-Walled Carbon Nanotubes on Silicon Substrates

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

The fabrication of a carbon nanotube transparent conductive film by electrophoretic deposition and hot-pressing transfer

Transparent, Conductive and Flexible Carbon Nanotube Films and Their Application in Organic Light Emitting Diodes

Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

An Etching-Free Method for Patterning Carbon Nanotube Films Enabled by Universal Wettability Modulation

Towards Solution Processed Electronic Circuits Using Carbon Nanotubes

Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate