Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

Aligned carbon nanotube field effect transistors by repeated compression-expansion cycles in Langmuir-Blodgett

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Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Direct Growth of Horizontally Aligned Carbon Nanotubes Between Electrodes and Its Application to Field-Effect Transistors

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Aligning Solution-Derived Carbon Nanotube Film with Full Surface Coverage for High-Performance Electronics Applications.

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Realizing Controllable Carbon Nanotube Arrays for Soft Devices by Asymmetric Langmuir–Blodgett and Hydrophilization Process

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Integration and Characterization of Transparent Thin Film Transistors with Carbon Nanotubes As Aligned Channel and Electrodes

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

Fabrication of Carbon Nanotube Field-Effect Transistors by Fluidic Alignment Technique

Aligned 2D carbon nanotube liquid crystals for wafer-scale electronics

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Contact Engineering and Channel Doping for Robust Carbon Nanotube NFETs

Carbon Nanotube Electronics: Recent Advances