Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

High-performance N-Type Carbon Nanotube Field-Effect Transistors with Estimated Sub-10-ps Gate Delay

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Carbon Nanotube Materials for Future Integrated Circuit Applications

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Deep-Submicrometer Complementary Metal-Oxide-Semiconductor Transistors Based on Carbon Nanotube Films

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Reliability Tests and Improvements for Sc-Contacted N-Type Carbon Nanotube Transistors

CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (adv. Electron. Mater. 8/2019)

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays