Abstract:The nanowire gate-all-around (GAA) structures with the nearly ultimate channel electrostatic integrity of the gate field can exhibit the best immunity to the short channel effect and drain-induced barrier lowering. Moreover, owing to the enhanced control efficiency of gate over the tunneling junction, the GAA-TFET also gives improved subthreshold swing and on-state current. Despite the excellent device performance, an accurate model is very significant for the practical application. Compared with the numerical methods which are usually time consuming and computationally inefficient, an analytical model could accelerate the device investigation and circuit design process. Even though some tunneling current models have already been reported for nanowire tunneling field-effect-transistors (TFETs), the model of the terminal capacitance is still an issue for nanowire TFETs. The capacitance is of great significance for the transient simulation. In this paper, a physical and analytical potential model considering both the source depletion region and the channel mobile charges, is developed for the GAA-TFETs. The results from the model are verified with the numerical simulations, and the excellent agreement between the two results indicates the validation of the proposed model. Based on the potential model, the terminal charge model and the capacitance model are further developed and also verified by the numerical simulations. The main inflection and variation of the terminal charges and capacitances with the biases can be predicted by our model. Besides, both the model results and the numerical simulations both demonstrate that the gate charge is dominated mainly by the drain charges and the contribution of the source charges can be almost neglected. This also leads to the very small gate-source capacitance and very large Miller capacitance in the TFET device. This will be detrimental to the performance of TFET-based digital circuits but can be mitigated with the hetero-oxide gate structure. The second order effects, such as the quantum confinement and traps, are ignored in this paper and can be taken into the core model in the future work. It should also be noted that there is no iterative process involved during the model derivation, thus the developed model can be easily applied to the widely used SPICE platform and will be useful in designing and investigating the GAA-TFET based circuits.

On Gate Capacitance Of Nanotube Networks

Gate Capacitance Coupling of Singled-Walled Carbon Nanotube Thin-Film Transistors

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

Mobility Extraction for Nanotube TFTs

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

Gate Capacitance Model for Aligned Carbon Nanotube FETs With Arbitrary CNT Spacing

Lowering Interface State Density in Carbon Nanotube Thin Film Transistors Through Using Stacked Y2O3/HfO2 Gate Dielectric

Transmission Line Impedance of Carbon Nanotube Thin Films for Chemical Sensing

Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors.

Analysis of contact resistance in single-walled carbon nanotube channel and graphene electrodes in a thin film transistor

Insight into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

Determination of individual contact interfaces in carbon nanotube network-based transistors