GaN HEMT Degradation: Effect of RF Stress

Erica Douglas,B. P. Gila,F. Ren,C. R. Abernathy,S. J. Pearton

DOI: https://doi.org/10.1149/ma2012-02/41/3017

2012-06-04

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Liang Zhou,Zheng-Wei San,Liang Lin,Wen-Yan Yin

DOI: https://doi.org/10.1109/APEMC.2016.7522823

2016-01-01

Abstract:This paper demonstrated electro-thermal-stress interaction of Gallium Nitride (GaN) high electron mobility transistors (HEMTs) breakdown with a high-power microwave (HPM) pulse injected. A series of GaN HEMT-based power amplifiers were designed and measured by using a special HPM system for characterizing their power-to-failure values. The crack area in the field plate of GaN HEMT was also characterized experimentally. Electro-thermal-stress simulation was performed for capturing temperature and stress distributions over the structure so as to understand breakdown mechanism of GaN HEMTs.
Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Rong Jiang,Xiao Shen,Jingtian Fang,Pan Wang,En Xia Zhang,Jin Chen,Daniel M. Fleetwood,Ronald D. Schrimpf,Stephen W. Kaun,Erin C. H. Kyle,James S. Speck,Sokrates T. Pantelides

DOI: https://doi.org/10.1109/TDMR.2018.2847338

IF: 1.886

2018-01-01

IEEE Transactions on Device and Materials Reliability

Abstract:Gate and drain bias dependences of hot carrier degradation are evaluated for AlGaN/GaN HEMTs fabricated via two different process methods. Both positive and negative threshold voltage Vth shifts are observed for each device type, depending on the mode and duration of the stress, indicating the presence of significant densities of donor-like and acceptor-like traps. Worst-case stress bias for trans...
Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Qicong Li,Haijun Lou,Linli Zhu

DOI: https://doi.org/10.1007/s00339-023-06631-z

2023-01-01

Applied Physics A

Abstract:This work aims to study the radiation influence characteristics of strained-GaN-based high electron mobility transistors (HEMTs). GaN-based HEMTs are made of the heterostructures, such as AlGaN/GaN, and the resulting mismatch strain can affect the radiation resistance. This study employs the atomic-scale simulation, the Monte Carlo method, and the carrier transport theory to investigate the strain effects on the radiation characteristics in GaN-based HEMT. A strain-electric coupling theoretical model is proposed to predict radiation degradation behavior. The proton-radiation-induced degradation of the device is caused by the point defects that are generated by displacement effect. We find that the compressive strain can reduce the density of defects, leading to enhancing radiation resistance of the device. On the other hand, the tension can weaken the radiation resistance. This work will provide theoretical support to stress/strain engineering for the optimal design of space devices.
Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

S. Khemiri,M. Kadi,A. Louis

DOI: https://doi.org/10.1016/j.microrel.2011.07.074

IF: 1.6

2011-09-01

Microelectronics Reliability

Abstract:In the context of studying the reliability of RF High Power Amplifiers (HPA) in their real environment, a study of the behavior of AlGaN/GaN HEMTs performances under electromagnetic stress is presented in this paper. The DUT has undergone several stress combinations (electromagnetic stress, electromagnetic and RF stress, electromagnetic and DC stress, …). The near field setup is used to disturb with electromagnetic field the device under test (DUT). Degradations in DC and power characteristics are observed for all stress types. This could be associated with electron trapping within the AlGaN barrier and AlGaN surface leading depletion of the 2-DEG.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Qiang Chen,Y. Q. Chen,Chang Liu,Kuiwei Geng,Yujuan He,Rui Gao,Yun Huang,Xiaodong Yang

DOI: https://doi.org/10.1109/ted.2020.3040698

IF: 3.1

2021-01-01

IEEE Transactions on Electron Devices

Abstract:In this article, the degradation behavior of the electrical characteristics of AlGaN/GaN HEMTs subjected to radio frequency (RF) overdrive stress has been studied. Trap analysis based on low-frequency noise (LFN) and electroluminescence (EL) characterizations was carried out for AlGaN/GaN HEMTs before and after RF stress. The experimental results show that drain-to-source current of AlGaN/GaN HEMTs after RF stress is obviously lower than that of the fresh devices. The maximum change of drain-to-source current was up to 79 mA in the saturation zone. The threshold voltage drifted forward and gate-lag characteristic became worse for the AlGaN/GaN HEMTs after RF stress. The EL characterizations also showed the nonuniformity of channel illumination intensity, which indicates the distribution of electron of the channel nonuniform. Trap analysis was performed by using the LFN method, and the LFN results showed that the trap density increased by about one order of magnitude in the AlGaN/GaN HEMTs after RF stress, which would lead to more depletion of the channel two-dimensional electron gas (2DEG) electrons. The mechanism of increasing trap density could be attributed to defects induced by RF stress at AlGaN surface and AlGaN barrier layer. The experimental results may offer a useful reference in the design and application of RF of AlGaN/GaN HEMTs.

engineering, electrical & electronic,physics, applied
Stress Reliability Study of GaN HEMT Devices

Aixi Zhang,Yandong He,Jin He,Yiqun Wei,Guoqing Hu,Chunlai Li,Guangjin Ma,Rui Wang

DOI: https://doi.org/10.1109/AEECA49918.2020.9213576

2020-01-01

Abstract:Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are invented as promising replace to existing Si and GaAs based devices in the RF/Micro-Wave power amplifiers and high-power switching fields. Along with the fast development of device technology and circuit design methodology, the reliability issue of GaN HEMTs is becoming great challenge for circuit designers and simulator. In this report, the stress reliability of E-mode HEMT at the conductance state is investigated. The characteristic forward gate voltage is verified, once above which the switch voltage shows a little while always negative direction drift. This character seems to be nonrecoverable even rest time over one days while above 400°C high ratio annealing. On the other hand, the enhanced HEMTs show more good reliability once the work voltage less the characteristic gate voltage. The enhanced stability of turn on voltage provides evidence to support the fact the characteristic voltage drift is not external high E-field independent physical phenomenon. These results provide better understanding for GaN HEMT circuit design and device process technology development.
Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress

chen chen,gang xie,ceng tang,kuang sheng

DOI: https://doi.org/10.4028/www.scientific.net/AMR.732-733.1255

2013-01-01

Abstract:An investigation of gate degradation characteristics of AlGaN/GaN HEMTs under PWM stress is proposed in this paper. The device under testing features double source-connected field plates to reshape the surface electric field. A PWM signal with the operation frequency varied from 10 kHz to 1 MHz was applied to the gate electrode while the source was shorted to ground. HP 4155B was used to measure the gate characteristic of the device by every 30 minutes. The value of on-resistance shows an increase of 12.9 % after the device has been under stress for 30 minutes with the switching frequency of 10 kHz and the degradation is improved with higher switching frequency, while the threshold voltage and gate leakage current do not change significantly during the test.
Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature

Chang Liu,Yiqiang Chen,Yuhan Xie,Hongxia Liu,Zongqi Cai

DOI: https://doi.org/10.3390/mi15091100

2024-08-30

Abstract:We have investigated the electrical properties and reliability of AlGaN/GaN high electron mobility transistors (HEMT) under high-temperature RF overdrive stress. The experimental results show that the drain current and transconductance of the device decrease at 25 °C and 55 °C but do not change significantly at 85 °C before and after the stress. The decline rate of the saturation drain current, the degradation amplitude of transconductance, and the drift amplitude of threshold voltage decrease with the increase in temperature. The results of pulse I-V and low-frequency noise tests show that the current collapse is inhibited, and the trap density is reduced at higher temperatures. The Electroluminescence (EL) test shows that the luminescence characteristics of the device after RF overdrive stress are more scattered and weaker. We believe that the degradation at lower temperatures is mainly due to the influence of the hot electron effect (HEE), while the change in electrical properties at higher temperatures is due to the weakening of HEE and the improvement of the Schottky interface.
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Gaudenzio Meneghesso,Fabiana Rampazzo,Peter Kordoš,Giovanni Verzellesi,Enrico Zanoni,Peter Kordos

DOI: https://doi.org/10.1109/ted.2006.885681

IF: 3.1

2006-12-01

IEEE Transactions on Electron Devices

Abstract:Long-term ON-state and OFF-state high-electric-field stress results are presented for unpassivated GaN/AIGaN/GaN high-electron-mobility transistors on SiC substrates. Because of the thin GaN cap layer, devices show minimal current-collapse effects prior to high-electric-field stress, despite the fact that they are not passivated. This comes at the price of a relatively high gate-leakage current. Under the assumption that donor-like electron traps are present within the GaN cap, two-dimensional numerical device simulations provide an explanation for the influence of the GaN cap layer on current collapse and for the correlation between the latter and the gate-leakage current. Both ON-state and OFF-state stresses produce simultaneous current-collapse increase and gate-leakage-current decrease, which can be interpreted to be the result of gate-drain surface degradation and reduced gate electron injection. This study shows that although the thin GaN cap layer is effective in suppressing surface-related dispersion effects in virgin devices, it does not, per se, protect the device from high-electric-field degradation, and it should, to this aim, be adopted in conjunction with other technological solutions like surface passivation, prepassivation surface treatments, and/or field-plate gate.

engineering, electrical & electronic,physics, applied
Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Rong Jiang,En Xia Zhang,Xiao Shen,Jin Chen,Kai Ni,Pan Wang,Daniel M. Fleetwood,Ronald D. Schrimpf,Stephen W. Kaun,Erin C. H. Kyle,James S. Speck,Sokrates T. Pantelides

DOI: https://doi.org/10.1109/RADECS.2016.8093099

2016-01-01

Abstract:Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.
Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Zhang Qianqian,Tang Jianjun,Wang Yong,Liang Ting,Xiong Jijun

DOI: https://doi.org/10.3969/j.issn.1671-4776.2011.03.008

2011-01-01

Abstract:The designing,processing and testing of the GaN-based HEMT micro-accelerometer structure were introduced,and the results were analyzed.The stress testing was carried out by Raman spectrum test and ANSYS simulation software.The IDS-VDS characteristics of the GaN-based HEMT at different stress states and different temperatures were tested by Agilent 4156C.The piezoresistance coefficient and its variation of the GaN-based HEMT were calculated and analyzed with the relevant test data.The results show that the equivalent piezoresistance coefficient of the GaN-based HEMT at room temperature is(2.47±0.04)×10-9 Pa-1,which is higher than that of the silicon,i.e.(7.23±3.62)×10-10 Pa-1.At the same time,the output characteristic of the HEMT from-40 ℃ to 50 ℃ was tested.The result shows that the saturation source-drain current of the HEMT decreases with the increase of the temperature.The piezoresistance coefficient has a negative temperature coefficient,and the piezoresistance coefficient decreases at the rate of 226 TPa-1/℃ with the increase of the temperature.
Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

Nahid Sultan Al-Mamun,Md Abu Jafar Rasel,Zahabul Islam,Marian Tzolov,Christopher M. Smyth,Aman Haque,Douglas E. Wolfe,Fan Ren,Stephen J Pearton

DOI: https://doi.org/10.1088/1361-6463/ad8b58

2024-10-26

Journal of Physics D Applied Physics

Abstract:Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistor (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect and eliminate because of their highly localized nature. We propose that their high stored internal energy make potential sites for defect nucleation sites under radiation, particularly if their locations coincide with the electrically sensitive regions of a transistor. In this study, we validate this hypothesis with molecular dynamic simulation and experiments exposing both pristine and annealed HEMTS to 2.8 MeV Au+3 irradiation. Our unique annealing process uses mechanical momentum of electrons, also known as the electron wind force (EWF) to mitigate the residual stress at room temperature. High-resolution transmission electron microscopy (TEM) and cathodoluminescence spectra reveal the reduction of point defects and dislocations near the two-dimensional electron gas region of EWF-treated devices compared to pristine devices. The EWF-treated HEMTs showed relatively higher resilience with approximately 10% less degradation of drain saturation current and ON-resistance and 5% less degradation of peak transconductance. Both mobility and carrier concentration of the EWF-treated devices were less impacted compared to the pristine devices. Our results suggest that the lower density of nanoscale stress localization contributed to the improved radiation tolerance of the EWF-treated devices. Intriguingly, the EWF is found to modulate the defect distribution by moving the defects to electrically less sensitive regions in the form of dislocation networks, which act as sinks for the radiation induced defects and this assisted faster dynamic annealing.

physics, applied
1/F Noise in GaN/AlGaN HEMTs

Daniel M. Fleetwood,P. Wang,J. Chen,Rong Jiang,E. X. Zhang,Michael W. McCurdy,Ronald D. Schrimpf

DOI: https://doi.org/10.1109/icsict.2016.7998835

2016-01-01

Abstract:The voltage dependence of the low-frequency noise of GaN/AlGaN HEMTs is usually modeled in terms of mobility fluctuations. Noise measurements in commercial devices before and after proton irradiation and/or voltage stress have been found instead to be more consistent with number fluctuations. Low-frequency noise measurements vs. temperature show defect-related peaks in energy at ~ 0.2 eV, ~ 0.5 eV, and ~ 0.7 eV that increase with proton irradiation and/or voltage stress. The Dutta-Horn model of 1/f noise describes these results well, demonstrating that the noise is caused by defects in the AlGaN and/or GaN layers.
Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Linfei Gao,Ze Zhong,Qiyan Zhang,Xiaohua Li,Xinbo Xiong,Shaojun Chen,Longkou Chen,Huaibao Yan,Anle Zhang,Jiajun Han,Wenrong Zhuang,Feng Qiu,Hsien-Chin Chiu,Shuangwu Huang,Xinke Liu

DOI: https://doi.org/10.1109/jeds.2024.3362048

2024-03-02

IEEE Journal of the Electron Devices Society

Abstract:In this work, we investigated the stability of a -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve -GaN gate stability by using capacitance to release the hole into the -GaN layer to mitigate the threshold voltage shift. Through pulse I-V measurement and positive bias temperature instability (PBTI) test, the carrier transporting behavior in the gate region achieved dynamic equilibrium at 5 V gate bias. The positive gate shift of 0.4 V is observed with increasing voltage from 3 V to 8 V; initially drops smoothly after release stresses by external capacitance discharge. Finally, integrated passive components and -GaN gate HEMT circuit are recommended to mitigate the instability for E-mode HEMT.

engineering, electrical & electronic
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN Gate HEMTs

Kevin J. Chen

DOI: https://doi.org/10.1109/TED.2019.2924675

IF: 3.1

2019-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, we carried out a systematic investigation on gate degradation and the physical mechanism of the Schottky-type <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN gate HEMTs under positive gate voltage stress. The frequency- and temperature-dependent measurements have been conducted. It is found that the time-dependent gate degradation exhibits weak relevance with frequencies ranging from 10 to 100 kHz under dynamic gate stress and is similar to that in static gate stress. Both the gate breakdown voltage (BV) and mean-time-to-failure (MTTF) show positive temperature dependence. Moreover, the current–voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I–V</italic> ) characteristics and threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) instability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN devices before/after gate degradation are compared and analyzed. The degraded Schottky junction exhibits an ohmic-like gate behavior. It is revealed that under a large gate bias stress, high-energy electrons accelerated in the depletion region of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN layer would promote the formation of defect levels near the metal/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN interface, leading to the initial <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN layer degradation. The subsequent high gate leakage density could cause the final degradation of the AlGaN barrier.
The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

Guoyuan Li,Jun-Jea Feng,Yun Huang,Zhiyuan He,Y. En,Yiqiang Chen,T. Yin,Jiang He

DOI: https://doi.org/10.1109/PEAC.2018.8590242

2018-11-01

Abstract:This paper reports a research of the ESD robustness of GaN HEMT power devices with p-GaN gate structure. We investigated the positive short-pulse stress on the gate as well as the negative one. Transmission line pulse (TLP)was used in combination to generate the stress in this experiments. From the experiments, we found that such a structure has a stable performance under positive stresses on the Gate. But the devices turn to be unstable when negative ones are applied, observed from the reduction of out-put current, transconductance maximun value and positive shift of threshold voltage. These phenomena, may be caused by the traps in the p-GaN layer, is an important reference for static protection designs of the p-GaN devices.

Materials Science,Engineering,Physics
Early stage degradation related to dislocation evolution in neutron irradiated AlGaN/GaN HEMTs

Jianxing Xu,Rong Wang,Liang Zhang,Shiyong Zhang,Penghui Zheng,Ying Zhang,Yu Song,Xiaodong Tong

DOI: https://doi.org/10.1063/5.0011995

IF: 4

2020-07-13

Applied Physics Letters

Abstract:The early stage degradation of electrical properties in AlGaN/GaN high electron mobility transistors (HEMTs) under fast neutron irradiation is studied. After the 1 MeV neutron irradiation at a low fluence of 1 × 1014 neutrons/cm2, the reverse leakage current decreases while the output and transfer characteristics remain unchanged, which cannot be explained by the previously reported high-fluence degradation model. By employing temperature-dependent gate leakage current measurements, we show that the dislocation related Poole–Frenkel (PF) emission dominates the gate leakage mechanism before and after irradiation whereas the barrier height for electron emission to conductive dislocation increases after the neutron irradiation. A model with the evolution of dislocation from the VGa-decorated configuration to the pure configuration is proposed to describe the degradation of AlGaN/GaN HEMTs at the low-fluence early stage neutron irradiation. This model enriches the understanding of the degradation mechanism of neutron irradiated AlGaN/GaN HEMTs.

physics, applied
Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Zhanfei Han,Junbo Wang,Hongyue Wang,Meng Wang,Jincheng Zhang,Yue Hao,Xiangdong Li,Jiahui Yuan

DOI: https://doi.org/10.1109/PEAS58692.2023.10395456

2023-11-10

Abstract:This study investigates the recoverable current collapse phenomenon of p-GaN devices under repetitive short-circuit (SC) stress. A SC platform is established to simulate high-voltage and high-current conditions. The degradation of threshold voltage, saturation current, and conduction resistance indicates the occurrence of current collapse due to SC stress. Both gate and drain leakage decrease under SC stress, but these DC parameters recover after a 2-day period, suggesting that the current collapse under SC stress is caused by the charging and discharging of defects. Moreover, after 1000 cycles of SC stress, the bias temperature instability (BTI) is intensified, and this is accompanied by a decrease in gate leakage current, which, in turn, indicates a reduction in hole injection from the gate metal. The underlying mechanism involves the capture of channel electrons by AlGaN, p-GaN, and their interface defects, leading to an elevation of the barrier and the recoverable current collapse effect of p-GaN HEMTs under SC stress.

Materials Science,Engineering,Physics
The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

Shumeng Yan,Tianying Yang,TingTing Yuan,Guoguo Liu,Tao Xu,Lijie Chen,Chuang Cheng,Gaopeng Chen

DOI: https://doi.org/10.1088/1361-6463/ad8455

2024-10-09

Journal of Physics D Applied Physics

Abstract:The RF degradation mechanism under high temperature of high power GaN-based high electron mobility transistors (HEMTs) are proposed in this paper. The saturated output power (Psat), power added efficiency (PAE) and gain of the HEMTs deteriorated obviously under large power dissipation operation conditions which contribute to the elevate of junction temperature (Tj). The high Tj caused the negative shift of threshold voltage and the reduction of electron mobility, meanwhile, promoting trapping effects of the devices. As a result, the Psat and PAE of high power HEMTs (Psat = 152 W) decreased 0.76 dB and 8.3% which is more serious than low power HEMTs (Psat = 20 W) with Psat and PAE reducing 0.16 dB and 3.1% as elevating the operation temperature from 25 to 150 oC. By increasing the gate-to-drain distance from 1.625 to 2.175 μm, the stability of drain current and HTRB reliability are improved. It demonstrates that the trapping effect can be suppressed by decreasing the electric field under the gate, therefore, the RF output characteristics are boosted by 1.2 W, 1 dB and 2.6% for the device with gate width of 11.52 mm.

physics, applied
V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Rui Wang,Jian-Ming Lei,Hui Guo,Ran Li,Dun-Jun Chen,Hai Lu,Rong Zhang,You-Dou Zheng

DOI: https://doi.org/10.1109/led.2021.3104852

IF: 4.8157

2021-10-01

IEEE Electron Device Letters

Abstract:In this work, details of stress time dependent transient ${V}_{\text {T}}$ shift in p-GaN Gate HEMTs are captured using a fast sweeping method. A minimum saturated ${V}_{\text {T}}$ shift ($\Delta {V}_{\text {T}\_{}\text {Sat}}$ ) independent of stress time at about 4 V gate stress is observed, and electron tunneling process assisted by shallow traps in the AlGaN barrier is introduced as a likely mechanism to explain the phenomena. Under gate stress of 6 V and above, a stress time dependent over-recovery results in a negative ${V}_{\text {T}}$ shift before the final recovery to the fresh state, confirming that hole de-trapping process needs to take a longer time than electron de-trapping process. In addition, under AC gate stress condition, $\Delta {V}_{\text {T}\_{}\text {Sat}}$ shows an opposite trend in cases of low and high forward AC gate bias stresses, which is explained by the difference in the trapping rates of electrons and holes.

engineering, electrical & electronic

GaN HEMT Degradation: Effect of RF Stress

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Stress Reliability Study of GaN HEMT Devices

Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress

Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

1/F Noise in GaN/AlGaN HEMTs

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN Gate HEMTs

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

Early stage degradation related to dislocation evolution in neutron irradiated AlGaN/GaN HEMTs

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization