Abstract:With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation in the threshold voltage affects the stability of the device as well as the overall circuit performance. Therefore, in this paper, a review of previous work is presented. Temperature variation, gate stress variation, and gate contact variation are investigated to analyze the physical mechanisms that generate the threshold voltage (VTH) drift phenomenon in GaN HEMT devices. Finally, improvement methods suitable for GaN HEMT devices under high-temperature and high-voltage conditions are summarized.

What problem does this paper attempt to address?

The paper primarily explores the threshold voltage (VTH) stability issues of Gallium Nitride High Electron Mobility Transistors (GaN HEMT) and their influencing factors. Due to their wide bandgap, high electron mobility, and high breakdown voltage characteristics, GaN HEMTs have become important research subjects in high-voltage and high-frequency switching circuits. However, these devices exhibit threshold voltage drift under conditions of temperature changes, gate stress variations, and gate contact changes, which can affect device stability and overall circuit performance. The paper specifically analyzes as follows: 1. **Factors Influencing Threshold Voltage Drift**: - **Switching Stress**: When GaN HEMTs are under switching stress conditions, bulk defects and interface defects within the device may capture electrons or holes. If the release rate of electrons or holes from deep-level defects cannot keep up with the switching response frequency, it will lead to changes in the charge distribution in the gate region, thereby causing changes in the threshold voltage. - **Thermal Stress**: As the chip area continues to shrink, the operating temperature of GaN HEMTs increases, which affects the stability of the threshold voltage. Studies have found that the threshold voltage changes with temperature, and this change varies for different types of GaN HEMTs (such as Schottky type and Ohmic type). 2. **Causes of Threshold Voltage Drift**: - Under different gate bias conditions, the threshold voltage may shift in a positive or negative direction. For example, when a lower positive gate bias is applied, the threshold voltage may shift in a positive direction; whereas under higher bias, it may shift in a negative direction. - Temperature changes can also affect the threshold voltage. In some cases, as the temperature increases, the threshold voltage may increase; in other cases, it may decrease. 3. **Summary and Improvement Methods**: - The paper reviews previous research work and analyzes the physical mechanisms of threshold voltage drift. - Finally, it proposes improvement methods for GaN HEMTs under high-temperature and high-voltage conditions to enhance the structure and performance of these devices. In summary, this paper, by reviewing existing research results, delves into the phenomenon and causes of threshold voltage drift in GaN HEMTs and proposes solutions to this issue. This is of great significance for promoting the application of GaN HEMTs in power circuits and systems.

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

Stress Reliability Study of GaN HEMT Devices

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Principles and Impacts of Dynamic Threshold Voltage in a P-Gan Gate High-Electron-mobility Transistor

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests.

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate