Abstract:Radiation effect of electronic devices is a complex issue that attracted a lot of interest in the area of aviation industry and nuclear engineering. In order to investigate the relationship between structure damage and electrical performance of electronic devices, first-principle modeling and calculations were carried out to link SiO2/Si interfacial defect states and electron transport properties of electronic devices. We found that the oxygen vacancy (VO) is much more easier to form than silicon vacancy ($\textbf{V}_{\mathbf {Si}}$) under the radiation environment. The band structure shows that two defect levels were localized inside the band gap of the SiO2/Si interface, approximately 0.19 eV and 0.25 eV below the conduction band minimum (CBM) as electronic traps, which were induced by a Si dangling bond defects. The $\textbf{V}_{\mathbf {O\, }}$ as the donor defect makes the interface restructuring and chemical bond changing, which leads to the defect level crossing the Fermi level ($E_{\mathbf {F}}$). Oxygen atoms of SiO2 at the interface act as a potential well to keep electrons from tunneling. The barrier for carriers disappear after oxygen atom being moved, which will reduce the electrical gain and breakdown strength of devices. Our results gave a physical interpretation to the relationship between defects and electrical performance of electronic materials and indicated that the dangling bonds and $\textbf{V}_{\mathbf {O}}$textbf at the interface are needed to be suppressed generating in order to harden the electronic devices.

Interstitial Oxygen-Related Defects And Current Leakage In Trench Metal-Oxide-Semiconductor Field-Effect Transistor On Epi/As++ Structure

Evolution of secondary defects in arsenic implanted Si

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

The Influence of Deep-Level Defects With Various Depths in SiO<sub>2</sub> on Ionizing Damage

Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er2O3/InP Heterointerface

First-Principles Study on Leakage Current through Si/SiO$_2$ Interface

A Nanoscale Analysis Of The Leakage Current In Sio(2) Breakdown

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down Via-Contact Type Amorphous InGaZnO Thin-Film Transistors

A Study on the Isolation Ability of LOC al O xidation of SiC (LOCOSiC) for 4H-SiC CMOS Process

Intrinsic Defects in α-Al2O3: Structural and Electronic Properties

Leakage Current and Defect Analysis of Schottky Diodes on Molecular Monolayer-doped Silicon

A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal-Oxide-Semiconductor Devices

Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy

Optimization of Novel Oxide-Free Insulated Gate Structure for Inp Having an Ultrathin Silicon Interface Control Layer

Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

Influence Of Indium-Tin-Oxide Thin-Film Quality On Reverse Leakage Current Of Indium-Tin-Oxide/N-Gan Schottky Contacts

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes

Electrical Properties of Oxygen Precipitate-Related Defects in Czochralski Silicon