Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis

Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits

Off-state Avalanche Breakdown Induced Degradation in 20 V NLDMOS Devices

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

Adaptive Multioutput Gradient RBF Tracker for Nonlinear and Nonstationary Regression

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Understanding Hot Carrier Degradation and Variation in FinFET Technology

Interconnection Reliability on FinFET Devices

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

Investigation Of Dibl Degradation In Nanoscale Finfets Under Various Hot Carrier Stresses

Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling

On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET

A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs