Effects of Electrodeposited Co–W and Co–Fe–W Diffusion Barrier Layers on the Evolution of Sn/Cu Interface
Yuexiao Liu,Chongyang Li,Peixin Chen,Ming Li,Anmin Hu
DOI: https://doi.org/10.1016/j.matchemphys.2023.128761
IF: 4.778
2023-01-01
Materials Chemistry and Physics
Abstract:In 3D IC, a high-efficiency diffusion barrier layer is urgently required for Sn/Cu micro-bumps, to inhibit the formation of Cu-Sn intermetallic compounds (IMCs). In this work, the barrier performance of electrodeposited Ni, Co-9W, Co-20W, Co-20Fe-10W and Co-36Fe-17W were studied. After aging at 150 degrees C for 672 h, the thicknesses of the IMCs formed between Sn and these barriers were determined. Among the five barriers studied, Co-36Fe-17W exhibited the best barrier effect, with a thickness of 0.61 mu m. At the Sn/Co-W interface, CoSn3 IMC and Co-W-Sn were formed, while at the Sn/Co-Fe-W interface, CoSn3 IMC, FeSn2 IMC, and Co-Fe-W-Sn were observed. The layered CoSn3 IMC gradually evolved into an isolated island structure as the Fe and W concentration rose at the Sn/Co-Fe-W samples. The growth of CoSn3 in the Sn/Co-W and Sn/Co-Fe-W samples involved a competition between diffusion control and interfacial reaction control. The presence of W atoms effectively inhibited Co diffusion, while the FeSn2 IMC layer acted as a barrier, suppressing the nucleation of CoSn3. The synergistic effect of these factors contributed to the excellent barrier properties of the Co-Fe-W layer. This research establishes a scientific basis for selecting barriers that exhibit superiority in advanced packaging.