Abstract:Abstract Copper chemical mechanical polishing (CMP) in barrier layer slurries with periodate as oxidant has not been intensively studied. This work presents an investigation into copper tribocorrosion in potassium periodate-based slurries during CMP. The research focused on copper tribocorrosion behavior, the surface chemical and electrochemical reaction products, and the electrochemical mechanism during CMP. The copper surface film was characterized by Raman spectra experiments. Tribocorrosion tests combined with CMP chemical experiments were conducted to study the tribochemical behavior and wear-accelerated corrosion effect. The results show that copper corrosion is more severe in acid solutions than in alkaline conditions. The copper surface is mainly passivated with copper oxides, copper hydroxide, and copper iodide. Small amounts of copper iodate, copper periodate, and iodine could be detected under specific pH conditions. Abrasion could help to get a uniform passivation film on copper surface consisting of copper oxides, copper hydroxide, and copper iodide only. The material loss due to wear-accelerated corrosion during CMP was also investigated. The results show that under weakly alkaline conditions (pH 9 and pH 10), the wear-corrosion effect plays an important role in the total material loss due to corrosion. The wear-accelerated corrosion is mainly caused by the exposure of more cathodic reaction sites to the slurry for participation in the redox reaction and the local galvanic corrosion during the CMP process. The high wear corrosion proportion of the total corrosion (ΔIc/Icc) could help to obtain a better surface quality and desirable material removal rate during CMP.

Effect Of Impurity Distribution On Corrosion Behavior Of Electrodeposited Copper In H2o2-Based Slurry

Effect of Impurity Distribution on Corrosion Behavior of Electrodeposited Copper in H[sub 2]O[sub 2]-Based Slurry

Electrochemical corrosion behavior of nanocrystalline copper bulk

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization

The Influence of Slurry Containing Polystyrene Particles on Copper Chemical Mechanical Planarization

Effect of Impurity and Illumination on Copper Oxidation after Chemical Mechanical Polishing

Influence of impurities on the sintering densification in nano- Al2O3 powders coated by copper

Controlled Corrosion Behaviors of Copper in Oxidizer Solutions for Chemical Mechanical Polishing: Influence of the Decomposition Products

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Chemical Mechanical Planarization of Copper Using Ethylenediamine and Hydrogen Peroxide Based Slurry

The Role of Hydroxyethyl Cellulose (HEC) in the Chemical Mechanical Planarization of Copper

Effects of Chemical Additives of CMP Slurry on Surface Mechanical Characteristics and Material Removal of Copper

Performance of Sodium Dodecyl Sulfate in Slurry with Glycine and Hydrogen Peroxide for Copper-Chemical Mechanical Polishing

Copper chemical mechanical polishing using a slurry-free technique