Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing
Jinxiang Huo,Baohong Gao,Bin He,Wenhaoyu Li,Bin Liang,Mingyu Liu,Xuhua Chen
DOI: https://doi.org/10.1016/j.surfin.2024.104459
IF: 6.2
2024-05-24
Surfaces and Interfaces
Abstract:With its low resistivity and high mobility, copper (Cu) is widely used as a metallic material to interconnect processes in the fabrication of integrated circuits. Chemical mechanical polishing (CMP) achieves global planarization of wafer surfaces for subsequent lithography processes. The inhibitors added to Cu-CMP slurries inhibit the non-uniform corrosion of Cu, but reduce the material removal rate (MRR) of Cu-CMP and burden the post-polishing cleaning process. As a result, a Cu-CMP slurry with a high MRR while maintaining a low surface roughness has received much attention in the semiconductor industry. In this paper, N, N'-bis(3-aminopropyl) ethylenediamine (TAD) is used as a uniform corrosion chemical additive for Cu slurries. The formation of water-soluble Cu-TAD complex through the interaction of TAD's primary amine with Cu ions is demonstrated through electrochemical measurements, fourier transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-vis) absorption spectroscopy, and quantum chemical (QC) calculations. molecular dynamics (MD) simulations and X-ray photoelectron spectroscopy (XPS) reveal that both TAD and its Cu-TAD complex adsorb onto the surface of metallic Cu, alleviating the non-uniform corrosion of Cu. In addition, TAD added copper glycine-based slurries achieve high MRR and maintain ideal surface roughness.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films