Abstract:As the most basic interconnection metallic material, copper (Cu) has been widely used in giant-large scale integrated circuits (GLSI). Corrosion inhibitors always play a crucial role in the Cu chemical mechanical polishing (CMP) process. The passivation of hydrogen peroxide (H2O2) alone is too weak to adequately protect against chemical corrosion on the surface of Cu film, thus, it is necessary to add corrosion inhibitors to the slurry. As a representative corrosion inhibitor, 1, 2, 4-triazole was compared with a novel corrosion inhibitor known as TT-LYK (ethanol, 2, 2′-[[(methyl-1H-benzotriazol-1-yl) methyl] imino] bis-), and their mixed inhibitor was studied in this paper. Different analytical methods such as the potentiodynamic polarization test, physical appearance phenomenon analysis, contact angle measurement and dynamic polishing experiment were used to compare their inhibition properties, and the fitting of different adsorption isotherms and static erosion tests were used to clarify the adsorption types and passivation processes respectively. The results indicated that both TT-LYK and 1, 2, 4-triazole achieved the goal of inhibiting Cu surface corrosion, but the inhibition effect of TT-LYK was slightly weaker at the same mass fraction. The corrosion protection of the two inhibitors is mainly attributable to the presence of organic inhibitor molecules on the surface of Cu by chemisorption and physisorption simultaneously. The passivation processes of both can be divided into two steps. First, the direct growth of the Cu-inhibitor passivation film occurs, followed by the redeposition of the Cu-inhibitor complex. From the results of electrochemical experiments, it can be concluded that the structure of the thin passivation film growing on the Cu surface varies with the inhibitor, and the composition of the passivation film was investigated by XPS and Raman spectrum analysis. At the same time, the surface roughness after polishing was found to decrease with the increase in inhibition effect of the inhibitors. According to the inhibition characteristics of these two inhibitors, a mixed corrosion inhibitor (TT-LYK and 1, 2, 4-triazole) was proposed in this study. Under the synergistic inhibition action, better inhibition effect and surface quality for Cu CMP were obtained. This outcome may be ascribed to the variation in the structure and density of the passivation film.

Synergistic Roles of Mixed Inhibitors and the Application of Mixed Complexing Ligands in Copper Chemical Mechanical Polishing

Mechanisms of Mixed Corrosion Inhibitors in Copper Chemical Mechanical Polishing

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Effects of mixed inhibitors in copper chemical mechanical polishing at a low down pressure

Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization

Synergetic effect of benzotriazole and non-ionic surfactant on copper chemical mechanical polishing in KIO 4 -based slurries

Synergistic Action Mechanism and Effect of Ammonium Dodecyl Sulfate and 1,2,4-Triazole in Alkaline Slurry on Step Height Reduction for Cu CMP

Chemical mechanical polishing for copper films in integrated circuit wiring layers using an advanced slurry

Research on Effects of Slurry Additives in Cucmp for Ulsi Manufacturing

Study on the film forming mechanism, corrosion inhibition effect and synergistic action of two different inhibitors on copper surface chemical mechanical polishing for GLSI

Rational Utilization of the Size and Electronic Effect of Inhibitors Enabling High Polishing Rate with Minimum Corrosion in Copper Chemical Mechanical Polishing

Effects of Chemical Additives of CMP Slurry on Surface Mechanical Characteristics and Material Removal of Copper

Investigation on the Mechanisms of Corrosion Inhibitor 5-aminotetrazole Used in the Copper Chemical Mechanical Polishing

Synergistic effect of composite complex agent on BTA removal in post CMP cleaning of copper interconnection

Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing

Optimizing of the Colloidal Dispersity of Silica Nanoparticle Slurries for Chemical Mechanical Polishing

Chemical processes in the chemical mechanical polishing of copper

Electrolyte Composition and Removal Mechanism of Cu Electrochemical Mechanical Polishing

Synergistic Effect of Composite Complex Agent on BTA Removal in Post-Cu-CMP: Experimental and Theoretical Analysis

Electrochemical behavior of slurries used for copper

The Effect of Cu2+ Ions and Glycine Complex on Chemical Mechanical Polishing (CMP) Performance of SiC Substrates