Abstract:3D wafer or chip stacking by through-silicon vias (TSVs) has brought the industry close to a breakthrough. For fabricating TSV structure, a serious challenge is the front side chemical mechanical planarization (CMP) process and especially non-uniformity within 300 mm post-CMP wafers. This paper makes thorough investigation into front side CMP by studying material removal rate (MRR) selectivity and non-uniformity (NU) in TSV and corresponding copper/TEOS layer removal. MRR and NU of different layers were measured under different polishing down force and hydrogen peroxide concentration, and removal rate selectivity was calculated and compared. The results showed that down force should be controlled to achieve a high material removal rate while greatly maintaining NU in a low level. Hydrogen peroxide concentration had a very strong influence on MRR and selectivity of copper/TEOS oxide and directly leads to via dishing situation, which influence the non-uniformity. Subsequently, an ideal combination of process parameters were achieved to obtain a good result in terms of low non-uniformity. This was applied to TSV polishing to verify performance and stability, conducted in a marathon test including TSV/copper/TEOS wafers. In order to facilitate the explanation of TSV removal, the synergistic effect of different layers and removal mechanism on TSV CMP were explained. This conform to the experiments, which is of great value to further research about profile control in the TSV CMP process.

TSV CMP process optimization and dishing defect reduction

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Non-uniformity and Removal Rate Selectivity Investigations in Through Silicon Via Front Side CMP

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

CU seed, CMP process development and via resistance extraction in through silicon via technology

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

The Study of Backside Tsv Reveal Process by Direct Si/Cu Grinding and Polishing

TSV Cu Plating and Implications for CMP

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Chemical-mechanical planarization aided dimple etching for self alignment

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

3D interconnection process development and integration with low stress TSV

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Modeling and Simulation of Cu Tsv Electroplating for Wafer-Level Mems Vacuum Packaging

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

A Research Of The Micro-Damage Of The Backside Tsv Heterogeneous Microstructure After Cmp Process With Alkaline Slurry

Research of Vertical via Based on Silicon, Ceramic and Glass

Effective Approach for TSV Cu Plating Gap Fill Improvement