Abstract:Despite the fact that substantial research has been conducted on the through-silicon via (TSV) formation process during three-dimensional integration, there is still less understanding on the chemical mechanical planarization (CMP) process and post-CMP via dishing control mechanism in TSV fabrication. In this study, we investigated the synergistic effect of mechanical and chemical factors on the CMP performance of TSV, and analyzed the experimental results from different aspects. A high-resolution surface-profile-measuring instrument, combined with Scanning Electron Microscopy (SEM) and other measurements, was used to demonstrate the mechanism of non-uniformity and via dishing, and the experimental results indicate that via dishing and non-uniformity of wafers are strongly mitigated by combining high down force with low down force. Based on numerical analysis, it can be concluded that the solution of the via protrusion issue requires a sufficiently high hydrogen peroxide concentration in order to modify the removal rate selectivity of copper and barrier/oxide. The polishing time should be strictly controlled to prevent oversize dishing or protrusion. Moreover, material removal models for via dishing, based on several factors mentioned above, were established to elucidate the mechanism of via dishing/protrusion formation, and to illustrate the further optimization of the TSV–CMP process.

TSV Cu Plating and Implications for CMP

TSV Cu Plating and Implications for CMP

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Impact of Bath Stability on Electroplated Cu for Through-Silicon-Vias (TSV) in a Controlled Manufacturing Environment

Impact of Bath Stability on Electroplated Cu for TSVs in a Controlled Environment

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

TSV CMP process optimization and dishing defect reduction

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Effect of additives on copper electroplating profile for TSV filling

Chemical processes in the chemical mechanical polishing of copper

Slurry System Establishment and Optimization for Advanced Cobalt Interconnect Metallization

Electroless Cu Deposition Process on TiN for ULSI Interconnect Fabrication Via Pd/Sn Colloid Activation

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

Tribo-Electrochemical Characterization of Ru, Ta and Cu CMP Systems Using Percarbonate Based Solutions

Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing