Abstract:Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is essential for commercial high-volume manufacturing. Annealing a silicon device with copper TSVs causes high stresses in the copper and may cause a “pumping” phenomenon in which copper is forced out of the blind TSV to form a protrusion. This is a potential threat to the back-end interconnect structure, particularly for low-κ materials, since it can lead to cracking or delamination. In this work, we studied the phenomenon of Cu protrusion and microstructural changes during thermal annealing of a TSV wafer. The extruded Cu-TSV was observed using scanning electron microscopy (SEM), 3D profilometry, and atomic force microscopy (AFM). The electron backscatter diffraction (EBSD) technique was employed to study the grain orientation of Cu-TSV and evolution of the grain size as a function of annealing temperature. The elastic modulus and yield stress of copper were characterized using nanoindentation. A model for Cu protrusion is proposed to provide insight into the failure mechanism. The results help to solve a key TSV-related manufacturing yield and reliability challenge by enabling high-throughput TSV fabrication for 3D IC integration.

Impact of Bath Stability on Electroplated Cu for Through-Silicon-Vias (TSV) in a Controlled Manufacturing Environment

Impact of Bath Stability on Electroplated Cu for TSVs in a Controlled Environment

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Influence of Electroplating Current Density on Through Silicon Via Filling

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Study of internal stress on electroplating copper used in through silicon via filling

TSV Cu Plating and Implications for CMP

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Research on Effect of Annealing on Copper Deposited by Electroplating in High Density TSV

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Material characterization in TSV fabricated by supercritical carbon dioxide electroplating

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

FEA study on the TSV copper filling influenced by the additives and electroplating process

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias