Abstract:Abstract Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems (MEMS) devices. Considering the cost-effective and reliable manufacturing of ultra-deep TSVs, the formation of continuous barrier and seed layers remains a crucial challenge to solve. Herein, we present a novel dual catalysis-based electroless plating (ELP) technique by tailoring polyimide (PI) liner surfaces to fabricate dense combined Ni barrier/seed layers in ultra-deep TSVs. In additional to the conventional acid catalysis procedure, a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid (PAA) interfacial layer, resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer, particularly at the bottom of the deep TSV. TSVs with depths larger than 500 μm and no voids are successfully fabricated in this study. The fabrication process involves low costs and temperatures. For a fabricated 530-μm-deep TSV with a diameter of 70 μm, the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V, respectively, indicating good electrical properties. The proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Wetting Process of Copper Filling in Through Silicon Vias

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

Material characterization in TSV fabricated by supercritical carbon dioxide electroplating

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

A wet process to etch arrayed vias for through silicon via application of 3D packaging

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Copper-Based TSV: Interposer

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

Reliability study of through-silicon via (TSV) copper filled interconnects

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system