Abstract:High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller keep-out zones (KOZs) and higher integration density for the miniaturization of high-performance three-dimensional (3D) integration of integrated circuits (IC), micro-electro-mechanical systems (MEMS), and other devices. In this study, HAR TSVs with a diameter of 11 μm and an aspect ratio of 10:1 are successfully fabricated in a low-cost process flow. Conformal polyimide (PI) liners are deposited using a vacuum-assisted spin coating technique, and the effects of spin coating time and speed on the deposition results are discussed. Then, continuous Cu seed layers are fabricated by sequential sputtering and ultrasound-assisted electroless plating. Additionally, void-free and seamless Cu conductors are formed by electroplating. Moreover, a semi-additive method is used to fabricate the redistribution layers (RDLs) on the insulating layers of photosensitive PI (PSPI). Notably, a plasma bombardment process is introduced to remove residual PSPI in the contact windows between RDLs and central pillars. Results show that the resistance of a single TSV from a daisy chain of 144 TSVs with density of 2000/mm2 is about 28 mΩ. Additionally, the S-parameters of a single TSV are obtained using L-2L de-embedding technology, and the experimental and simulated results agree well. The proposed low-cost fabrication technologies and the related electrical characterization of PI-TSVs are significant for the application of HAR TSVs in modern heterogeneous integration systems.

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Wetting Process of Copper Filling in Through Silicon Vias

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Electroplating Cu on ALD TiN for high aspect ratio TSV

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Electroplating Cu on ALD $\text{tin}$ for Small Size TSV

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

CU seed, CMP process development and via resistance extraction in through silicon via technology

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

All-wet TSV filling with highly adhesive displacement plated Cu seed layer

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Fully back-end TSV process by Cu electro-less plating for 3D smart sensor systems

Novel Copper Filling Methods for 2 Μm × 20 Μm TSVs with an Electroless Deposited Co or Atomic Layer Deposited Ru Seed Layer

Low cost TSV fabrication technologies using anisotropic Si wet etching and conformal electroless plating of barrier and seed metals

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO 2 for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration