Abstract:Abstract Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems (MEMS) devices. Considering the cost-effective and reliable manufacturing of ultra-deep TSVs, the formation of continuous barrier and seed layers remains a crucial challenge to solve. Herein, we present a novel dual catalysis-based electroless plating (ELP) technique by tailoring polyimide (PI) liner surfaces to fabricate dense combined Ni barrier/seed layers in ultra-deep TSVs. In additional to the conventional acid catalysis procedure, a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid (PAA) interfacial layer, resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer, particularly at the bottom of the deep TSV. TSVs with depths larger than 500 μm and no voids are successfully fabricated in this study. The fabrication process involves low costs and temperatures. For a fabricated 530-μm-deep TSV with a diameter of 70 μm, the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V, respectively, indicating good electrical properties. The proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

All-wet TSV filling with highly adhesive displacement plated Cu seed layer

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

Low cost TSV fabrication technologies using anisotropic Si wet etching and conformal electroless plating of barrier and seed metals

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Electroplating Cu on ALD TiN for high aspect ratio TSV

TSV Filling Technology using Cu Electrodeposition

Effective Approach for TSV Cu Plating Gap Fill Improvement

Pure Bottom-up filling process for efficient TSV metallization

Novel Copper Filling Methods for 2 Μm × 20 Μm TSVs with an Electroless Deposited Co or Atomic Layer Deposited Ru Seed Layer

Fast copper plating process for TSV fill

Extrusion Suppression of TSV Filling Metal by Cu-W Electroplating for Three-Dimensional Microelectronic Packaging

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Through silicon via filling by copper electroplating in acidic cupric methanesulfonate bath

Effect of additives on copper electroplating profile for TSV filling

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Simultaneous filling of through silicon vias (TSVs) with different aspect ratios using multi-step direct current density

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating