Abstract:In order to obtain high-quality through-silicon via (TSV) arrays for high voltage applications, we optimized the fabrication processes of the Si holes, evaluated the dielectric layers, carried out hole filling by Cu plating, and detected the final structure and electric properties of the TSVs. The Si through-hole array was fabricated in an 8-inch Si substrate as follows: First, a blind Si hole array was formed by the Si deep reactive etching (DRIE) technique using the Bosch process, but with the largest width of the top scallops reduced to 540 nm and the largest notch elimidiameternated by backside grinding, which also opens the bottom ends of the Si blind holes and forms 500-μm-deep Si through holes. Then, the sidewalls of the Si holes were further smoothed by a combination of thermal oxidation and wet etching of the thermal oxide. The insulating capability of the dielectric layers was evaluated prior to metal filling by using a test kit. The metal filling of the through holes was carried out by bottom-up Cu electroplating and followed by annealing at 300 °C for 1 h to release the electroplating stress and to prevent possible large metal thermal expansion in subsequent high-temperature processes. The TSV arrays with different hole diameters and spacing were detected: no visible defects or structure peeling was found by scanning electron microscopy (SEM) observations, and no detectable interdiffusion between Cu and the dielectric layers was detected by energy dispersive X-ray (EDX) analyses. Electric tests indicated that the leakage currents between two adjacent TSVs were as low as 6.80 × 10−10 A when a DC voltage was ramped up from 0 to 350 V, and 2.86 × 10−9 A after a DC voltage was kept at 100 V for 200 s.

Low cost TSV fabrication technologies using anisotropic Si wet etching and conformal electroless plating of barrier and seed metals

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

All-wet TSV filling with highly adhesive displacement plated Cu seed layer

Development of Cu-less TSV reveal process using Si/Cu grinding, electroless Ni plating, and alkaline etching of Si

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Fully back-end TSV process by Cu electro-less plating for 3D smart sensor systems

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

TSV Filling Technology using Cu Electrodeposition

3D interconnection process development and integration with low stress TSV

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs

Electroplating Cu on ALD $\text{tin}$ for Small Size TSV

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Process Optimization and Performance Evaluation of TSV Arrays for High Voltage Application

Modeling and Simulation of Cu Tsv Electroplating for Wafer-Level Mems Vacuum Packaging