Abstract:Abstract Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems (MEMS) devices. Considering the cost-effective and reliable manufacturing of ultra-deep TSVs, the formation of continuous barrier and seed layers remains a crucial challenge to solve. Herein, we present a novel dual catalysis-based electroless plating (ELP) technique by tailoring polyimide (PI) liner surfaces to fabricate dense combined Ni barrier/seed layers in ultra-deep TSVs. In additional to the conventional acid catalysis procedure, a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid (PAA) interfacial layer, resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer, particularly at the bottom of the deep TSV. TSVs with depths larger than 500 μm and no voids are successfully fabricated in this study. The fabrication process involves low costs and temperatures. For a fabricated 530-μm-deep TSV with a diameter of 70 μm, the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V, respectively, indicating good electrical properties. The proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

Fully back-end TSV process by Cu electro-less plating for 3D smart sensor systems

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Fast copper plating process for TSV fill

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

3D interconnection process development and integration with low stress TSV

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

Copper-Based TSV: Interposer

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

TSV Filling Technology using Cu Electrodeposition

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Through silicon via copper electrodeposition for 3D integration

Bottom-up Filling of Through Silicon Via (TSV) with Parylene As Sidewall Protection Layer

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating