Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Material characterization in TSV fabricated by supercritical carbon dioxide electroplating

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Influence of Electroplating Current Density on Through Silicon Via Filling

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Impact of Bath Stability on Electroplated Cu for TSVs in a Controlled Environment

Impact of Bath Stability on Electroplated Cu for Through-Silicon-Vias (TSV) in a Controlled Manufacturing Environment

Evaluation of the Crystallographic Quality of Electroplated Copper Thin-Film Interconnection Embedded in a Si Substrate

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

FEA study on the TSV copper filling influenced by the additives and electroplating process

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Study of internal stress on electroplating copper used in through silicon via filling

Parametric study of electroplating-based via-filling process for TSV applications

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Research on Effect of Annealing on Copper Deposited by Electroplating in High Density TSV

TSV Filling Technology using Cu Electrodeposition

TSV Cu Plating and Implications for CMP