Abstract:Abstract With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

Optimization of Design of Experiment for Chemical Mechanical Polishing of A 12-Inch Wafer

Numerical and Experimental Investigation on Multi-Zone Chemical Mechanical Planarization

Chemical mechanical polishing: Theory and experiment

Optimization of CMP from the Viewpoint of Consumable Effects

Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process

Contact Stress Non-Uniformity of Wafer Surface for Multi-Zone Chemical Mechanical Polishing Process

Review on modeling and application of chemical mechanical polishing

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Wafer Back Pressure Control and Optimization in the Cmp Process

Experimental Studies on Interfacial Fluid Lubrication and Wafer Status During Chemical Mechanical Polishing of 12-Inch Wafer

Analytical Modelling of Material Removal in Copper Chemical Mechanical Polishing Incorporating the Scratch Hardness of the Passivated Layer on Copper Thin Film Wafer

Material Removal Regions in Chemical Mechanical Planarization for Submicron Integrated Circuit Fabrication: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution,and Wafer-Pad Contact Area

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Metal Clearing Process Control in Metal Cmp

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Progress in Material Removal Mechanisms of Surface Polishing with Ultra Precision

A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

Mechanism and Applications of Chemical and Mechanical Polishing

Effect of cations on the improvement of material removal rate of silicon wafer in chemical mechanical polishing