Abstract:The micro-scale contact status between pad and workpiece surface plays one of the most significant roles in determining the material removal rate (MRR) during the chemical mechanical polishing (CMP) process. To evaluate the contribution of random contact status to the material removal process, the paper proposed a novel concept of “effective contact spots”. It represents the probability of randomly distributed pad asperities sliding across a given coordinate point on the workpiece surface. Furthermore, mechanical removal capacity parameter γ and chemical reaction capacity parameter β were defined to mathematically model the material removal process from a micro-scale chemical-mechanical synergistic perspective. To validate the model, a series of CMP tests (with in-situ conditioning) were conducted on three types of materials (BK7 glass, fused silica, and Si). The real contact status was also measured and analyzed statistically after being conditioned with two types of conditioners. Experimental observations and theoretical analysis results indicated that the chemical-mechanical synergism was the fundamental mechanism for the contribution of the micro-scale contact status to the material removal process. Resulting in the fact that the real contact ratio, radius, and spacing of the real contact spots play different dominant roles on MRR for different materials. Moreover, solution strategies in this study can provide the knowledge needed for improving the material removal stability, and further enable predictive control on the polishing or conditioning recipe before a non-ideal contact status result in an unexpected material removal rate.

Numerical and Experimental Investigation on Multi-Zone Chemical Mechanical Planarization

Contact Stress Non-Uniformity of Wafer Surface for Multi-Zone Chemical Mechanical Polishing Process

Effect of Zone Pressure on Wafer Bending and Fluid Lubrication Behavior During Multi-Zone Cmp Process

Optimization of Design of Experiment for Chemical Mechanical Polishing of A 12-Inch Wafer

Analysis on Contact and Flow Features in CMP Process

Simulation of CMP Properties with Couple Stress

A Preliminary Model Accounting for the Suction Pressure in CMP Process

Chemical mechanical polishing: Theory and experiment

Wafer Back Pressure Control and Optimization in the Cmp Process

Modeling Chemical Mechanical Polishing with Couple Stress Fluids

Analysis on Pad Effects in Chemical Mechanical Polishing

Material Removal Regions in Chemical Mechanical Planarization for Submicron Integrated Circuit Fabrication: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution,and Wafer-Pad Contact Area

Experimental Studies on Interfacial Fluid Lubrication and Wafer Status During Chemical Mechanical Polishing of 12-Inch Wafer

Tribology Analysis of Chemical‐Mechanical Polishing

Kinematic Analysis of in Situ Measurement During Chemical Mechanical Planarization Process.

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

A Theoretical Model Incorporating Both the Nano-Scale Material Removal and Wafer Global Uniformity During Planarization Process

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process

Modeling the microscale contact status in chemical mechanical polishing process