Abstract:Abstract With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

Analysis on Pad Effects in Chemical Mechanical Polishing

Contribution of Porous Pad to Chemical Mechanical Polishing

Analysis on Contact and Flow Features in CMP Process

Research on CMP Process Parameters Effect on Slurry Transport

Chemical mechanical polishing: Theory and experiment

Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

Micro-Polar Effects of Flow Features of Slurries in Chemical Mechanical Polishing Process

A Preliminary Model Accounting for the Suction Pressure in CMP Process

Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

Effects of Nano-Scale Particles in Chemical Mechanical Polishing Process

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Porosity Model for Flows in CMP

Research Progress of Material Removal Mechanism in Chemical Mechanical Planarization for Metal Interconnection Layer of Chips

Mechanism and Applications of Chemical and Mechanical Polishing

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Enhancing CMP Performance of Micro-Structured Pad Patterns: CFD Simulations and Experimental Evaluations

The Deterioration Characteristics and Mechanism of Polishing Pads in Chemical Mechanical Polishing of Fused Silica

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Review on modeling and application of chemical mechanical polishing

Recent developments and applications of chemical mechanical polishing

Wear phenomena in chemical mechanical polishing