Abstract:Chemical-mechanical planarization (CMP) represents the preferred technology in which both chemical and mechanical interactions are combined to achieve global planarization/polishing of wafer surfaces (wafer patterns from metal with a selective layer, in this paper). CMP is a complex process of material removal process by friction, which interferes with numerous mechanical and chemical parameters. Compared with chemical parameters, mechanical parameters have a greater influence on the material removal rate (MRR). The mechanical parameters manifest by friction force (Ff) and heat generated by friction in the CMP process. The Ff can be estimated by its monitoring in the CMP process, and process temperature is obtained with help of an infrared rays (IR) sensor. Both the Ff and the MRR increase by introducing colloidal silica (SiO2) as an abrasive into the selective layer CMP slurry. The calculated wafer non-uniformity (WNU) was correlated with the friction coefficient (COF). The control of Ff and of the slurry stability is important to maintain a good quality of planarization with optimal results, because Ff participates in mechanical abrasion, and large Ff may generate defects on the wafer surface. Additionally, the temperature generated by the Ff increases as the SiO2 concentration increases. The MRR of the selective layer into the CMP slurry showed a non-linear (Prestonian) behavior, useful not only to improve the planarization level but to improve its non-uniformity due to the various pressure distributions. The evaluation of the Ff allowed the calculation of the friction energy (Ef) to highlight the chemical contribution in selective-layer CMP, from which it derived an empirical model for the material removal amount (MRA) and validated by the CMP results. With the addition of abrasive nanoparticles into the CMP slurry, their concentration increased and the MRA of the selective layer improved; Ff and MRR can be increased due to the number of chemisorbed active abrasive nanoparticles by the selective layer. Therefore, a single abrasive was considered to better understand the effect of SiO2 concentration as an abrasive and of the MRR features depending on abrasive nanoparticle concentration. This paper highlights the correlation between friction and temperature of the SiO2 slurry with CMP results, useful to examine the temperature distribution. All the MRRs depending on Ef after planarization with various SiO2 concentrations had a non-linear characteristic. The obtained results can help in developing a CMP process more effectively.

Research on CMP Process Parameters Effect on Slurry Transport

Analysis on Pad Effects in Chemical Mechanical Polishing

Study on the Effecting Factors of the Removal Rate During CMP Process

Study on Optimum Process of CMP

Contribution of Porous Pad to Chemical Mechanical Polishing

Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

Analysis on Contact and Flow Features in CMP Process

Micro-Polar Effects of Flow Features of Slurries in Chemical Mechanical Polishing Process

Primary Study of the Carrier of CMP

Enhancing CMP Performance of Micro-Structured Pad Patterns: CFD Simulations and Experimental Evaluations

Investigation of thermal effects in copper chemical mechanical polishing

Chemical mechanical polishing: Theory and experiment

Optimization of Design of Experiment for Chemical Mechanical Polishing of A 12-Inch Wafer

Nano Particles’ Behavior in Non-Newtonian Slurry in Mechanical Process of CMP

Slurry components in metal chemical mechanical planarization (CMP) process: A review

Slurry Parameters Effect on Chemical-Mechanical Planarisation (CMP) of Deposited Silver (ag) on Chips

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Effect of Slurry Injection Position on Material Removal in Chemical Mechanical Planarization

Porosity Model for Flows in CMP

The Effects of Friction and Temperature in the Chemical-Mechanical Planarization Process

Investigating the Impact of Pad Groove Depth Reduction on Process Variation in Oxide Chemical Mechanical Polishing