Abstract:Polishing is one of the most crucial finishing processes and usually consumes a sufficient slurry to achieve an ultra-fine surface. However, excess slurry consumption is environmentally costly, as it generates a large amount of wastewater. Given the growing environmental concerns, it is essential to improve the process efficiency and minimize the environmental burdens. Considering this, a novel polishing system, herein referred to as center-injected polishing, is proposed by injecting slurry into the center of the polishing pad. Here, it is aimed to utilize the centrifugal force of the rotating pad, with the aim of efficient slurry utilization. The slurry is directly introduced between the pad and the workpiece, then dispersed across the pad by centrifugal force. A simple experiment was conducted with computational analysis using the specially designed polishing tool to prove the concept; slurry was distributed more uniformly in center-injected polishing when compared to the conventional process. The polishing system was then constructed to evaluate polishing performances. Based on sets of experiments in the polishing of silicon carbide (SiC), slurry efficiencies and productivity were analyzed with respect to different rotational speeds and slurry supply rates. The material removal rate (MRR) was more than twice the rate achieved by conventional polishing at the same processing conditions; whereas the slurry consumption was approximately 60% less at the same MRR. The extended Preston equation was used to predict the MRR of the new process. It is expected that efficient slurry utilization will reduce the environmental footprint of abrasive processes.

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Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

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Study on the Removal Function of Annular Polishing Pad Based on the Computer Controlled Polishing Technology

Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing

Analysis on Pad Effects in Chemical Mechanical Polishing

Micro-Polar Effects of Flow Features of Slurries in Chemical Mechanical Polishing Process

Center-injected Polishing for Efficient Slurry Utilization

Investigating the Impact of Pad Groove Depth Reduction on Process Variation in Oxide Chemical Mechanical Polishing

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Slurry Parameters Effect on Chemical-Mechanical Planarisation (CMP) of Deposited Silver (ag) on Chips

Nano Particles’ Behavior in Chemical Mechanical Polishing With the Effect of Non-Newtonian Properties of Slurry

Effects of Nano-Scale Particles in Chemical Mechanical Polishing Process

Experimental Studies on Interfacial Fluid Lubrication and Wafer Status During Chemical Mechanical Polishing of 12-Inch Wafer

Material Removal Regions in Chemical Mechanical Planarization for Submicron Integrated Circuit Fabrication: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution,and Wafer-Pad Contact Area

Influence of Slurry Ingredients as Particle on Hard Disk Substrate Polishing

Nano Particles’ Behavior in Non-Newtonian Slurry in Mechanical Process of CMP

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

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In Situ Measurement of Fluid Pressure at the Wafer-Pad Interface During Chemical Mechanical Polishing of 12-Inch Wafer

Feature-Scale Simulations of Particulate Slurry Flows in Chemical Mechanical Polishing by Smoothed Particle Hydrodynamics