Influence of Slurry Ingredients as Particle on Hard Disk Substrate Polishing

Sun Jiazhen,Pan Guoshun,Zhu Yonghua,Dai Yuanjing,Luo Jianbin,Li Weimin

DOI: https://doi.org/10.3969/j.issn.0254-0150.2007.11.001

2007-01-01

Abstract:Both high material removal rate(MRR) and smooth surface have to be achieved in primary chemical mechanical polishing(CMP) of hard disk substrates.The CMP experiments were made by using compositive and comminuted α-Al2O3 particles separately.The mechanisms of MRR affected by oxidant,complexant and pH value were analyzed.The results show that severe pits appear on substrate surface polished by compositive particles.Surface roughness(Ra) and surface waviness(Wa) could be greatly reduced by slashing the content of oxidant yet the MRR was unfavorably cut down.This kind of particles is not suitable to the primary CMP of disk substrates for MRR is awfully low.Dense scratches exist on substrate surface polished by comminuted particles;lubricant is helpful to reduce Ra and Wa of polished substrates.Though the MRR decreases correspondingly,it is still fairly high.Lubricant can be used to balance the surface quality and the MRR.The MRR would increase first and then decrease with the raising of either oxidant or complexant content in slurry containing comminuted particles.The MRR would go down with the increase of pH value but over-corrosion would be caused if the pH value is too low.It is suitable to maintain it between 2.0 and 3.0.