Abstract:The micro-scale contact status between pad and workpiece surface plays one of the most significant roles in determining the material removal rate (MRR) during the chemical mechanical polishing (CMP) process. To evaluate the contribution of random contact status to the material removal process, the paper proposed a novel concept of “effective contact spots”. It represents the probability of randomly distributed pad asperities sliding across a given coordinate point on the workpiece surface. Furthermore, mechanical removal capacity parameter γ and chemical reaction capacity parameter β were defined to mathematically model the material removal process from a micro-scale chemical-mechanical synergistic perspective. To validate the model, a series of CMP tests (with in-situ conditioning) were conducted on three types of materials (BK7 glass, fused silica, and Si). The real contact status was also measured and analyzed statistically after being conditioned with two types of conditioners. Experimental observations and theoretical analysis results indicated that the chemical-mechanical synergism was the fundamental mechanism for the contribution of the micro-scale contact status to the material removal process. Resulting in the fact that the real contact ratio, radius, and spacing of the real contact spots play different dominant roles on MRR for different materials. Moreover, solution strategies in this study can provide the knowledge needed for improving the material removal stability, and further enable predictive control on the polishing or conditioning recipe before a non-ideal contact status result in an unexpected material removal rate.

Analysis on Contact and Flow Features in CMP Process

A Preliminary Model Accounting for the Suction Pressure in CMP Process

Analysis on Pad Effects in Chemical Mechanical Polishing

Contribution of Porous Pad to Chemical Mechanical Polishing

Research on CMP Process Parameters Effect on Slurry Transport

Porosity Model for Flows in CMP

Analysis on Flow Properties of Chemical Mechanical Polishing Process

Simulation of CMP Properties with Couple Stress

Contact Stress Non-Uniformity of Wafer Surface for Multi-Zone Chemical Mechanical Polishing Process

Modeling the microscale contact status in chemical mechanical polishing process

Micro-Polar Effects of Flow Features of Slurries in Chemical Mechanical Polishing Process

Numerical and Experimental Investigation on Multi-Zone Chemical Mechanical Planarization

Modeling Chemical Mechanical Polishing with Couple Stress Fluids

Chemical mechanical polishing: Theory and experiment

A Chemical Mechanical Polishing Model Based on the Viscous Flow of the Amorphous Layer

A Contact-Mechanics-Based Model For General Rough Pads In Chemical Mechanical Polishing Processes

Micro-scale contact behavior and its effect on the material removal process during chemical mechanical polishing

Wear phenomena in chemical mechanical polishing

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Feature-Scale Simulations of Particulate Slurry Flows in Chemical Mechanical Polishing by Smoothed Particle Hydrodynamics

In Situ Measurement of Fluid Pressure at the Wafer-Pad Interface During Chemical Mechanical Polishing of 12-Inch Wafer