Abstract:The abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process is investigated in detail. Based on assumptions of plastic contact over wafer-abrasive and pad-abrasive interfaces, the normal distribution of abrasive size and an assumed periodic roughness of pad surface, a novel model is developed for material removal in CMP. The basic model is MMR = rho (w)NVol(removed), where rho (w) is the density of wafer, N the number of active abrasives, and Vol(removed) the volume of material removed by a single abrasive. The model proposed integrates process parameters including pressure and velocity and other important input parameters including the wafer hardness, pad hardness, pad roughness, abrasive size, and abrasive geometry into the same formulation to predict the material removal rate (MRR). An interface between the chemical effect and mechanical effect has been constructed through a fitting parameter H-w, "dynamical" hardness value of the wafer surface, in the model. It reflects the influences of chemicals on the mechanical material removal. The fluid effect in the current model is attributed to the number of active abrasives. It is found that the nonlinear down pressure dependence of material removal rate is related to a probability density function of the abrasive size and the elastic deformation of the pad. Compared with experimental results, the model accurately predicts MRR. With further verification of the model, a better understanding of the fundamental mechanism involved in material removal in the CMP process, particularly different roles played by the consumables and their interactions, can be obtained.

Micro-scale contact behavior and its effect on the material removal process during chemical mechanical polishing

Modeling the microscale contact status in chemical mechanical polishing process

Analysis on Contact and Flow Features in CMP Process

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Analyzing the effects of pad asperity on chemical mechanical polishing of copper thin film wafer

A Chemical Mechanical Polishing Model Based on the Viscous Flow of the Amorphous Layer

Effects of Nano-Scale Particles in Chemical Mechanical Polishing Process

Micro-Polar Effects of Flow Features of Slurries in Chemical Mechanical Polishing Process

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

A quantitative study of removal mechanism of copper polishing based on a single pad-asperity polishing test

A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process

Wear phenomena in chemical mechanical polishing

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling

Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

Non-continuum Material Removal Mechanism of Surface Polishing with Ultra Precision

Tribology Analysis of Chemical‐Mechanical Polishing

Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process

Abrasive Rolling Effects On Material Removal And Surface Finish In Chemical Mechanical Polishing Analyzed By Molecular Dynamics Simulation

Nano Particles’ Behavior in Non-Newtonian Slurry in Mechanical Process of CMP