Abstract:AbstractA thermomechanical model to describe the mechanisms of polishing pad scratching in chemical–mechanical planarization (CMP) has been formulated and investigated. CMP is a necessary process in integrated circuit (IC) fabrication to planarize wafers with nanoscale features after patterned layer deposition. Polishing pad asperities can produce microscale scratches on the wafer surface during CMP, reducing IC manufacturing yields. The constructed thermomechanical model accounts for stresses of the pad and wafer contact and also provides the means to track input energy dissipation during CMP. Tracking energy dissipation offers information about processes that may influence scratch production. This knowledge ultimately produces a greater physical understanding of CMP for the prevention of pad scratching. Polishing pad stress relaxation experiments demonstrate the importance of viscoelastic and plastic strain energy dissipation with its effects on the wafer stress field. Scratch producing ability of the polishing pad is found to decrease with use in CMP, with slurry soaking and increasing polishing time. Mechanical behavior of the polishing pad is demonstrated to differ when in compression and in tension. Compressibility of the pad material is shown to be significant in stress modeling through experimental measurement of polishing pad volume change. Differential scanning calorimetry of used polishing pad samples revealed energy dissipation into the polishing pad surface with increasing polishing time of CMP. Energy dissipation processes influence pad scratching in CMP. Analytical wafer stress field modeling unveils that the scratching ability of a polishing pad decreases when it is less stiff or has a smoother surface.

Analyzing the effects of pad asperity on chemical mechanical polishing of copper thin film wafer

Analytical Modelling of Material Removal in Copper Chemical Mechanical Polishing Incorporating the Scratch Hardness of the Passivated Layer on Copper Thin Film Wafer

A quantitative study of removal mechanism of copper polishing based on a single pad-asperity polishing test

Analysis on Pad Effects in Chemical Mechanical Polishing

A Contact-Mechanics-Based Model For General Rough Pads In Chemical Mechanical Polishing Processes

A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process

Novel Probability Density Function of Pad Asperity by Wear Effect over Time in Chemical Mechanical Planarization

Micro-scale contact behavior and its effect on the material removal process during chemical mechanical polishing

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Characteristics in chemical-mechanical polishing of copper: comparison of polishing pads

Energy dissipation and constitutive modeling for a mechanistic description of pad scratching in chemical–mechanical planarization

Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

Comparison of Polishing Pad Characteristics in Copper-interconnect Chemical Mechanical Polishing of 300 Mm Wafer

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

Contribution of Porous Pad to Chemical Mechanical Polishing

Modeling the microscale contact status in chemical mechanical polishing process

Analysis on Contact and Flow Features in CMP Process

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

A model for chemical–mechanical polishing of a material surface based on contact mechanics

Chemical effects on the tribological behavior during copper chemical mechanical planarization