Abstract:Continuous requirement for the improvement of chip performance caused an increasing attention on the copper polishing precision. To predict the copper removal rate, it is critical to understand the copper removal mechanism and quantitatively decouple the chemical and mechanical interactions. In this paper, the copper removal mechanism was investigated by a single pad-asperity polishing test with an in situ measurement device, which minimized the effects of random pad-asperity contact states and slurry distribution differences encountered in conventional experiments. Several electrochemical methods were used to monitor the chemical reaction rate and passivation processes, including the chrono-current method, electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS). The results reveal that mechanical action can hardly remove the unreacted copper. The complexing agent can only dissolve the mechanically removed passivation layer rather than dissolve the passivation layer directly. The copper is removed in an alternating process of generation and removal of passivation layers. A model is developed to predict the copper removal depth within 10% error. This research provides a quantitative analysis method for material removal rate of metal polishing. It can answer whether chemical reaction or mechanical action limits the improvement of removal rate or causes the change of removal rate.

Characteristics in chemical-mechanical polishing of copper: comparison of polishing pads

Comparison of Polishing Pad Characteristics in Copper-interconnect Chemical Mechanical Polishing of 300 Mm Wafer

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Analysis on Pad Effects in Chemical Mechanical Polishing

Effect of Polish By-Products on Copper Chemical Mechanical Polishing Behavior

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Chemical effects on the tribological behavior during copper chemical mechanical planarization

Copper Chemical Mechanical Polishing Performances of Polystyrene/Ceria Hybrid Abrasives with a Core/Shell Structure

Study on the CMP Pad Life with Its Mechanical Properties

Study on Chemical Mechanical Polishing of Cu Single Crystal Wafer Prepared by Czochralski Method

A quantitative study of removal mechanism of copper polishing based on a single pad-asperity polishing test

Contribution of Porous Pad to Chemical Mechanical Polishing

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

The Deterioration Characteristics and Mechanism of Polishing Pads in Chemical Mechanical Polishing of Fused Silica

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization