Abstract:This article discusses advanced developments and applications of chemical mechanical polishing (CMP) published recently in the selected papers indexed by Web of Science. The topics covered are advances in slurry and abrasives, pads and conditioning, CMP for semiconductor device manufacturing, CMP for other applications, modeling and simulations, and CMP with ultrasonic vibrations, lasers, photocatalysts, or UV lamps. Nonspherical abrasive particles have been developed for CMP, resulting in increased material removal rates (MRRs). Advanced conditioning methods have been proposed to uniformly generate pad surface shapes. Fixed abrasive CMP has advantages with higher MRRs. New models for designing the pad and conditioner have been proposed, and more uniform pad shapes can be obtained. Integrated advanced process control improves the wafer-to-wafer variation. Dental implants treated by CMP perform equally or better than the baseline-machined implants and the biphasic calcium phosphate-treated implants. The slurry distribution and the abrasive behavior can be simulated by means of multiphase modeling. Molecular dynamics simulations can explore the mechanism of CMP. CMP of wafers can be simulated using an atomic force microscope with its tapping mode. Theoretical models have been developed to calculate removal depths, study the chemical action in CMP, and explore the crystal orientation effects. CMP assisted by ultrasonic vibrations increases CMP MRRs and lowers the roughness of polished surfaces. CMP assisted by using UV lamp power, femtosecond lasers, or photocatalysts enhances CMP MRRs.

Study on the CMP Pad Life with Its Mechanical Properties

Factors influencing the dressing rate of chemical mechanical polishing pad conditioning

Estimating Chemical Mechanical Polishing Pad Wear with Compressibility

CMP Pad Conditioning Using the High-Pressure Micro-Jet Method

Research on CMP Process Parameters Effect on Slurry Transport

Analysis on Pad Effects in Chemical Mechanical Polishing

Contribution of Porous Pad to Chemical Mechanical Polishing

Wear phenomena in chemical mechanical polishing

Amorphous Diamond Dresser for CMP Fixed Abrasives Pad

Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

The Deterioration Characteristics and Mechanism of Polishing Pads in Chemical Mechanical Polishing of Fused Silica

The CMP by Polishing with GiP Dressed by BODD

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

The Development of an Ultrasonic Head for CMP Pad Conditioning

Optimization of CMP from the Viewpoint of Consumable Effects

Chemical mechanical polishing: Theory and experiment

Characteristics in chemical-mechanical polishing of copper: comparison of polishing pads

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

Comparison of Polishing Pad Characteristics in Copper-interconnect Chemical Mechanical Polishing of 300 Mm Wafer

Recent developments and applications of chemical mechanical polishing

Enhancing CMP Performance of Micro-Structured Pad Patterns: CFD Simulations and Experimental Evaluations