Abstract:Considering the technical status and existing problems of traditional silicon wafer chemical mechanical polishing (CMP), especially for the diameter of silicon wafer increasing, constantly, the surface quality and efficiency of silicon wafer polishing are becoming an urgent problem to be solved, so the research subject of ultrasonic vibration hybrid polishing new technique was proposed. By means of mechanism theoretical analysis research, firstly, the processing mechanism of hybrid polishing was studied systematically. An investigation of polishing mechanisms based on the micro-contact model between the polishing pad and the polishing surface of silicon wafer was developed. Polishing mechanism theoretical analysis shows that when ultrasonic vibrations combined with mechanical and chemical, the performance of polishing slurry is improved in the process of CMP, therefore to create favorable conditions. To verify the established theory, then, a series of experiments to investigate the traditional CMP are conducted, as well as the polishing tool with the forms of ultrasonic vibration, the polishing pad, the polishing surface quality, velocity at polishing point v, and slurry supplying Q on silicon wafer polishing. Experiment findings showed that, in the same polishing conditions, especially, hybrid polishing by ultrasonic-elliptic-vibration has gained more advantage over the effect of silicon wafer polishing. When ultrasonic-elliptic-vibration is put in polishing tool, the silicon wafer polished surface roughness Ra from the traditional method of polishing 0.077μm going down to the 0.042μm, the no-smooth rate KR which describes the polished surface morphology is significantly improved, and the material removal rate increases by 18%. Experimental research findings of the surface quality and the material removal mechanism are shown to be consistent with the theoretical analysis.

The Development of an Ultrasonic Head for CMP Pad Conditioning

Improvement and Application of Pad Conditioning Accuracy in Chemical Mechanical Polishing

CMP Pad Conditioning Using the High-Pressure Micro-Jet Method

Recent developments and applications of chemical mechanical polishing

Study on the CMP Pad Life with Its Mechanical Properties

A Fundamental Investigation on Ultrasonic Assisted Fixed Abrasive CMP (UF-CMP) of Silicon Wafer

Development of Novel Conditioning Method Using Thermal Shape Memory Characteristics of Polyurethane CMP Pad

The CMP by Polishing with GiP Dressed by BODD

Development of Ultrasonic Vibration-Assisted Magnetic Compound Fluid (MCF) Polishing Technology

Experimental Investigation on Hybrid Technology of Ultrasonic Vibration Assisted Chemo-Mechanical Grinding (CMG) Silicon Wafer

Design of Ultrasonic Machining Device for Thin-Wall Cylinder of Air Compressor

Experimental investigation of silicon wafer hybrid polishing by UEV-CMP

Effects of the Ultrasonic Flexural Vibration on the Interaction Between the Abrasive Particles; Pad and Sapphire Substrate During Chemical Mechanical Polishing (CMP)

Experimental Study of Ultrasonic Vibration Assisted Chemical Mechanical Polishing for Sapphire Substrate

2207 Effects of Ultrasonic Vibration on Abrasive Pellet Working Life for Si Wafer Using Ultrasonic Assisted Fixed Abrasive Chemical Mechanical Polishing(UF-CMP)

Factors influencing the dressing rate of chemical mechanical polishing pad conditioning

Mechanism and Applications of Chemical and Mechanical Polishing

A New Approach to Silicon Wafer Edge Treatment by Ultrasonically Assisted Polishing (Uap)

High Efficiency Processing of Si Wafer Edge by Ultrasonic Vibration Assisted Polishing

A Hybrid Technique of Ultrasonic-Elliptic-Vibration-Assisted Chemical-Mechanical Polishing and its Experimental Investigation

Mechanism and Experimental Investigation on Silicon Wafer Hybrid Polishing by Ultrasonic-Elliptic-Vibration Chemical-Mechanical