Lapping of sapphire using developed clusters of diamond and ceria chemically active abrasives
Zhankui Wang,Shangci Huang,Kuncheng Liu,Zhicheng Zhao,Wei Feng,Minghua Pang,Jianxiu Su
DOI: https://doi.org/10.1016/j.mtcomm.2024.109386
IF: 3.8
2024-06-02
Materials Today Communications
Abstract:To improve the material removal rate (MRR) and surface quality Ra during the sapphire lapping process, this study proposes a new method for preparing chemically active abrasives cluster (CAAC). In this method, W3.5 single crystal diamond (W3.5 SCD) and W3.5 silicon carbide (W3.5 SiC), were mixed, sintered, crushed, and sieved to obtain CAAC with a particle size of 28 μm. Subsequently, lapping tests were conducted on the sapphire surface. Based on MRR and Ra as evaluation metrics, the lapping performance of W3.5 SCD, W28 SCD, 28 μm CAAC and chemically inactive abrasives cluster (CIAC) was compared. Finally, the surfaces of the processed samples were analyzed for elemental composition. The experimental results show that compared with the W28 SCD, the as-prepared CAAC exhibited 4.8 times higher removal rate (461.337 nm/min), and a surface roughness of 29.777 nm, indicating better Ra than that of the W28 SCD. Because the chemical reaction between the CAAC and the workpiece enhanced the friction-induced chemical action, the self-sharpening nature of the CAAC enhanced the mechanical removal action, boosted the MRR, and improved the surface quality of the workpiece. This method effectively improves the processing efficiency and quality of sapphire and reduces production costs. This study demonstrates a new idea for realizing the efficient and low-cost processing of sapphire.
materials science, multidisciplinary