Abstract:The demand for polished silicon wafers has increased significantly in recent years to cater to the development of the semiconductor industry. For example, polished silicon wafer has direct applications in integrated circuits, radio frequency amplifiers, micro-processors, micro-electromechanical systems, etc. To carry out mechanical polishing, lapping, grinding, or single-point diamond turning of silicon, diamond abrasives were extensively used before the implementation of chemo-mechanical polishing. During the diamond-based polishing, a few problems have already been identified, such as the formation of an amorphous phase, heat-affected zones, low material removal, etc. Some research work has also reported that nano-structured abrasives lead to a thin layer of the amorphous phase and a better material removal rate. In the same direction, a molecular dynamics simulation is carried out in this paper to investigate the mechanism of material removal from monocrystalline silicon during the diamond-abrasive-based polishing process. The present work is mainly focused on the dynamics of material removal phenomena near the abrasive particles at the nanometric scale by considering stress, lattice, cohesive energy, etc. This reveals that a higher value of indentation force results in surface buckling, which creates a zone of both compressive and tensile stresses, which increases the coordination number and forms β-silicon just ahead of the abrasive particle. This mechanism happens by developing a β-silicon phase on the surface with a thickness beyond a certain value of indentation force on the zone of compression. Buckling on this phase happens due to stress localisation in compression, as the flow stress of this phase is less than that of diamond cubic lattices. To avoid the mechanism of surface buckling and process silicon material on the surface, the indentation force needs to be maintained below a critical value. In the present case, it was found that the indentation force of less than or equal to 190 nN for the abrasive size of φ8 nm does the material removal by surface processing only without surface buckling. It was also found that surface processing helps to reduce the depth of the amorphous layer significantly without compromising the material removal rate or the generation of a wavy surface. Thus, the present mechanism will help in the polishing of silicon with minimum defects and reduce processing time for the final stage of polishing towards manufacturing ultra-smooth and planer surfaces.

Analysis of Fixed Abrasive Pads with a Nano-Sized Diamond for Silicon Wafer Polishing

Polishing Characteristics on Silicon Wafer Using Fixed Nano-Sized Abrasive Pad

A Study on Polishing Silicon Wafers by Hot Melt Adhesive Polishing Pads with Abrasives Coated in Different Ways

Observation in the Surface Roughness of Silicon Wafer During Semi-Fixed Abrasive Machining with Large Grains

Amorphous Diamond Dresser for CMP Fixed Abrasives Pad

Single crystal silicon wafer polishing by pretreating pad adsorbing SiO2 grains and abrasive-free slurries

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Novel Abrasive-Impregnated Pads and Diamond Plates for the Grinding and Lapping of Single-Crystal Silicon Carbide Wafers

In-situ reconditioning mechanism for fixed abrasive pads based on the wear behavior of loose grains

Approach: developing nano/sub-micron diamond slurry technology for enhanced precision polishing of optoelectronic materials

Polishing Performance and Removal Mechanism of Core-Shell Structured Diamond/SiO2 Abrasives on Sapphire Wafer

The Deterioration Characteristics and Mechanism of Polishing Pads in Chemical Mechanical Polishing of Fused Silica

Study of the Humidity-Controlled CeO2 Fixed-Abrasive Chemical Mechanical Polishing of a Single Crystal Silicon Wafer

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Investigating the Impact of Pad Groove Depth Reduction on Process Variation in Oxide Chemical Mechanical Polishing

Mechanism of surface modification on monocrystalline silicon during diamond polishing at nanometric scale

Polishing single-crystal silicon carbide with porous structure diamond and graphene-TiO2 slurries

Nanomaterials and Equipment for Chemical-Mechanical Polishing of Single-Crystal Sapphire Wafers

Process Optimization of Lapping Sapphire Substrate with Fixed Diamond Abrasive Pad

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

A study on mechanism of sapphire polishing using the diamond abrasive by molecular dynamics