Abstract:In abrasive machining of monocrystalline silicon, surface and subsurface behaviors are changed by the brittle-to-ductile removal transfer due to uncertain mechanical force, thus leading to surface micro-burr, surface roughness, subsurface residual stress, subsurface damage and so on. In mechanical diamond grinding, an impulse-discharge between wheel metal and semiconductor silicon is proposed to drive a loose-abrasive flow along with the flexible pressure for nano-scale surface removal, micro-scale mechanical removal and thermal modification. The formation behavior of abrasive-Si interface is researched to improve the surface and subsurface integrity by integrating modification, flexible removal and cut-copying. First, the surface formation procedure was modelled in relation to impulse-discharge energy, hydrodynamic pressure and loose-abrasive diameter, etc. Then, the dynamic characteristic of fixed-diamond, loose-abrasive machining as well as impulse-discharge machining was investigated in relation to the ductile-brittle transition. Finally, the surface integrity of monocrystalline silicon was investigated in hybrid machining. It is shown that the hybrid machined formation chain is formed in the abrasive-workpiece interface with cut-copying the surface profile. The impulse-discharge drives the loose-abrasive and modifies the interface by thermal ductile transition. The loose-abrasive obtains a removal force to eliminate the modified Si–O bond and expose the Si2p3/2, Si2p1/2 substrate with ductile formation. Decreasing the impulse-discharge energy and hydrodynamic pressure promote brittle to ductile transition for high surface and subsurface integrity. Accordingly, the surface integrity is subject to impulse-discharge energy, hydrodynamic pressure and loose-abrasive size. With the thermal tensile and abrasive driven effect of impulse-discharge, the residual compressive stress, surface micro-burr and subsurface damage thickness were decreased by 72 %, 65 % and 88 %, respectively. As a result, the mechanical cut-copying with impulse-discharge thermal modifying action and abrasive flow driving ensures the surface integrity and form accuracy in process.

Observation in the Surface Roughness of Silicon Wafer During Semi-Fixed Abrasive Machining with Large Grains

Surface and Subsurface Integrity of Monocrystalline Silicon in Impulse-Discharge Driven Abrasive Machining

Surface Integrity and Removal Mechanism in Grinding Sapphire Wafers with Novel Vitrified Bond Diamond Plates

Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

Grinding mechanism and surface quality evaluation strategy of single crystal 4H-SiC

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

Study on the Surface and Subsurface Integrity of Ground Monocrystalline Silicon Wafers

Development and Evaluation of Soft Abrasive Grinding Wheel for Silicon Wafer in Wet Mechanical Chemical Grinding

Experimental investigation on subsurface damage depth of ground silicon wafers in wafer-rotating grinding

Mechanism of Surface Formation of Silicon Wafer Processed by Fixed Abrasive Polishing with Assistance of Ultrasonic Vibration and Experiments

Surface/subsurface Observation and Removal Mechanisms of Ground Reaction Bonded Silicon Carbide

Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding

Simulated and Measured Surface Roughness in High-Speed Grinding of Silicon Carbide Wafers

Analysis of the high-efficiency and low-damage abrasive processing mechanism for SiC based on the SPH simulation of single-grain indentation and scratching

Formation of Subsurface Cracks in Silicon Wafers by Grinding

Machining Characteristics And Removal Mechanisms Of Reaction Bonded Silicon Carbide

Material removal mechanism and grinding force modelling of ultrasonic vibration assisted grinding for SiC ceramics

Wear-induced variation of surface roughness in grinding 2.5D C f /SiC composites

Raman Microspectroscopy Study on the Ground Surface of Monocrystalline Silicon Wafers

Experimental Investigation on the Surface and Subsurface Damages Characteristics and Formation Mechanisms in Ultra-Precision Grinding of SiC

Study on high-shear and low-pressure grinding using a new BAAT with soft-hard combined substrate for single-crystal silicon