Abstract:A molecular dynamics model of the diamond abrasive polishing the single crystal silicon is established. Crystal surfaces of the single crystal silicon in the Y-direction are (010), (011), and (111) surfaces, respectively. The effects of crystallographic orientations on polishing the non-continuous single crystal silicon surfaces are discussed from the aspects of surface morphology, displacement, polishing force, and phase transformation. The simulation results show that the Si(010) surface accumulates chips more easily than Si(011) and Si(111) surfaces. Si(010) and Si(011) workpieces are deformed in the entire pore walls on the entry areas of pores, while the Si(111) workpiece is a local large deformation on entry areas of the pores. Comparing the recovery value of the displacement in different workpieces, it can be seen that the elastic deformation of the A side in the Si(011) workpiece is larger than that of the A side in other workpieces. Pores cause the tangential force and normal force to fluctuate. The fluctuation range of the tangential force is small, and the fluctuation range of the normal force is large. Crystallographic orientations mainly affect the position where the tangential force reaches the maximum and minimum values and the magnitude of the decrease in the tangential force near the pores. The position of the normal force reaching the maximum and minimum values near the pores is basically the same, and different crystallographic orientations have no obvious effect on the drop of the normal force, except for a slight fluctuation in the value. The high-pressure phase transformation is the main way to change the crystal structure. The Si(111) surface is the cleavage surface of single crystal silicon, and the total number of main phase transformation atoms on the Si(111) surface is the largest among the three types of workpieces. In addition, the phase transformation in Si(010) and Si(011) workpieces extends to the bottom of pores, and the Si(111) workpiece does not extend to the bottom of pores.

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Molecular dynamics study of crystal orientation effect on surface generation mechanism of single-crystal silicon during the nano-grinding process

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The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding

Superimpose mechanism of surface generation process in grinding of monocrystalline silicon using molecular dynamics simulation

Effects of grinding speeds on the subsurface damage of single crystal silicon based on molecular dynamics simulations

Surface Characteristics and Material Removal Mechanisms During Nanogrinding on C-face and Si-face of 4H-Sic Crystals: Experimental and Molecular Dynamics Insights

Surface Generation Mechanism of Monocrystalline Materials under Arbitrary Crystal Orientations in Nanoscale Cutting

Anisotropy of Machined Surfaces Involved in the Ultra-Precision Turning of Single-Crystal Silicon—a Simulation and Experimental Study

Investigation of machining mechanism of monocrystalline silicon in nanometric grinding

Study on the Surface and Subsurface Integrity of Ground Monocrystalline Silicon Wafers

Effects of Anisotropy on Single Crystal Silicon in Polishing Non-Continuous Surface

Theoretical and Experimental Analysis on Super Precision Grinding of Monocrystal Silicon

Formation of Subsurface Cracks in Silicon Wafers by Grinding

Mechanism analysis and process optimization of nanogrinding single-crystal SiC

Grinding mechanism and surface quality evaluation strategy of single crystal 4H-SiC

Effects of processing parameters and grinding direction on the material removal mechanism of (100) surface single crystal diamond in self-rotating mechanical grinding

Theoretical Study on the Monocrystal Silicon Nanometric Grinding Process

Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

Subsurface Damage in the Monocrystal Silicon Grinding on Atomic Scale

Sensitivity Analysis of the Surface Integrity of Monocrystalline Silicon to Grinding Speed with Same Grain Depth-of-cut