Abstract:Abstract With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

Modeling Chemical Mechanical Polishing with Couple Stress Fluids

Simulation of CMP Properties with Couple Stress

Micro-Polar Effects of Flow Features of Slurries in Chemical Mechanical Polishing Process

Analysis on Flow Properties of Chemical Mechanical Polishing Process

Effects of Nano-Scale Particles in Chemical Mechanical Polishing Process

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process

Tribology Analysis of Chemical‐Mechanical Polishing

A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

Mechanical Model of Single Abrasive During Chemical Mechanical Polishing: Molecular Dynamics Simulation

Mechanism and Applications of Chemical and Mechanical Polishing

Analysis on Contact and Flow Features in CMP Process

Analysis on Pad Effects in Chemical Mechanical Polishing

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Chemical mechanical polishing: Theory and experiment

Review on modeling and application of chemical mechanical polishing

Contribution of Porous Pad to Chemical Mechanical Polishing

Effects of Film Stress on the Chemical Mechanical Polishing Process

Multigrid Technique Incorporated Algorithm for Cmp Lubrication Equations

Feature-Scale Simulations of Particulate Slurry Flows in Chemical Mechanical Polishing by Smoothed Particle Hydrodynamics

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)