Abstract:The abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process is investigated in detail. Based on assumptions of plastic contact over wafer-abrasive and pad-abrasive interfaces, the normal distribution of abrasive size and an assumed periodic roughness of pad surface, a novel model is developed for material removal in CMP. The basic model is MMR = rho (w)NVol(removed), where rho (w) is the density of wafer, N the number of active abrasives, and Vol(removed) the volume of material removed by a single abrasive. The model proposed integrates process parameters including pressure and velocity and other important input parameters including the wafer hardness, pad hardness, pad roughness, abrasive size, and abrasive geometry into the same formulation to predict the material removal rate (MRR). An interface between the chemical effect and mechanical effect has been constructed through a fitting parameter H-w, "dynamical" hardness value of the wafer surface, in the model. It reflects the influences of chemicals on the mechanical material removal. The fluid effect in the current model is attributed to the number of active abrasives. It is found that the nonlinear down pressure dependence of material removal rate is related to a probability density function of the abrasive size and the elastic deformation of the pad. Compared with experimental results, the model accurately predicts MRR. With further verification of the model, a better understanding of the fundamental mechanism involved in material removal in the CMP process, particularly different roles played by the consumables and their interactions, can be obtained.

A Preliminary Model Accounting for the Suction Pressure in CMP Process

Analysis on Contact and Flow Features in CMP Process

Contribution of Porous Pad to Chemical Mechanical Polishing

Analysis on Pad Effects in Chemical Mechanical Polishing

Porosity Model for Flows in CMP

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

A Chemical Mechanical Polishing Model Based on the Viscous Flow of the Amorphous Layer

A Contact-Mechanics-Based Model For General Rough Pads In Chemical Mechanical Polishing Processes

A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

Modeling the microscale contact status in chemical mechanical polishing process

Analytical Modelling of Material Removal in Copper Chemical Mechanical Polishing Incorporating the Scratch Hardness of the Passivated Layer on Copper Thin Film Wafer

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling

In Situ Measurement of Fluid Pressure at the Wafer-Pad Interface During Chemical Mechanical Polishing of 12-Inch Wafer

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process

Mechanical Model of Single Abrasive During Chemical Mechanical Polishing: Molecular Dynamics Simulation

Numerical and Experimental Investigation on Multi-Zone Chemical Mechanical Planarization

Chemical mechanical polishing: Theory and experiment

Mechanical Model of Nanoparticles for Material Removal in Chemical Mechanical Polishing Process

Contact Stress Non-Uniformity of Wafer Surface for Multi-Zone Chemical Mechanical Polishing Process