Abstract:：Chemical mechanical planarization, known as CMP, is one of the key technologies in chip manufacturing and is widely used to achieve the ultrafine planarization of a variety of structures on the nanometer scale.The metals in interconnection layer exhibits quite different properties from the materials in other structures in chips, whose planarization relies more on the chemical components in the polishing slurry.The synergistic mechanism depicts the process of material removal in metal CMP：the surface of the interconnection layer is first chemically modified by the chemical components in the slurry, followed by the subsequent mechanical abrasion and then removed away.Based on the mechanism, the review highlights the contact mechanics which studies the microscopic states and functions of the abrasive particles and the developments of related models; elaborates the roles of the chemical components including oxidizers, complexing agents and inhibitors, and the process and principle of their reactions with metals; summarizes the latest progress and tendency of slurry development.It is expected that it could provide insight on the future slurry developed for new process and materials, so as to achieve the desired material removal rate, superfine planarization and ultra-low defects requirements under different situations during the rapid advancement of the semiconductor manufacturing.

Kinematic Analysis of in Situ Measurement During Chemical Mechanical Planarization Process.

In-situ Cu Layer Thickness Measurement During Chemical Mechanical Planarization

An in Situ End-Point Detection System Using Motor Power Signal for Chemical Mechanical Planarization Process

Chemical mechanical polishing: Theory and experiment

Numerical and Experimental Investigation on Multi-Zone Chemical Mechanical Planarization

Kinematic Optimization for Chemical Mechanical Polishing Based on Statistical Analysis of Particle Trajectories

Optical and Mechanical Characterization of Chemical Mechanical Planarization Pad Surfaces

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process

Analysis on Contact and Flow Features in CMP Process

Chemical metrology methods for CMP quality

Research Progress of Material Removal Mechanism in Chemical Mechanical Planarization for Metal Interconnection Layer of Chips

Analysis on Pad Effects in Chemical Mechanical Polishing

A Preliminary Model Accounting for the Suction Pressure in CMP Process

Research on Multi-Method Endpoint Detection in Chemical Mechanical Planarization Process

Statistical and Experimental Analysis of Correlated Time-Varying Process Variables for Conditions Diagnosis in Chemical–Mechanical Planarization

A Lightweight Chip-Scale Chemical Mechanical Polishing Model Based On Polynomial Network

An in Situ Study of Chemical-Mechanical Polishing Behaviours on Sapphire (0001) Via Simulating the Chemical Product-Removal Process by AFM-tapping Mode in Both Liquid and Air Environments

Motor Power Signal Analysis for End-Point Detection of Chemical Mechanical Planarization

A Reliable Control System for Measurement on Film Thickness in Copper Chemical Mechanical Planarization System.

Nonlinear Dynamics Modeling of Correlated Functional Process Variables for Condition Monitoring in Chemical–Mechanical Planarization