Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

Fabrication and stacking of through-silicon-via array chip formed by notchless Si etching and wet cleaning of first metal layer

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Copper-Based TSV: Interposer

High speed Cu-Ni filling into TSV for 3-Dimensional Si chip stacking

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs

Tailored Femtosecond Bessel Beams for High-Throughput, Taper-Free Through-Silicon Vias (tsvs) Fabrication

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Through-silicon-via technology for 3D integration

Advanced TSV Filling Method with Sn Alloy and Its Reliability

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Fully back-end TSV process by Cu electro-less plating for 3D smart sensor systems

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias