Abstract:High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller keep-out zones (KOZs) and higher integration density for the miniaturization of high-performance three-dimensional (3D) integration of integrated circuits (IC), micro-electro-mechanical systems (MEMS), and other devices. In this study, HAR TSVs with a diameter of 11 μm and an aspect ratio of 10:1 are successfully fabricated in a low-cost process flow. Conformal polyimide (PI) liners are deposited using a vacuum-assisted spin coating technique, and the effects of spin coating time and speed on the deposition results are discussed. Then, continuous Cu seed layers are fabricated by sequential sputtering and ultrasound-assisted electroless plating. Additionally, void-free and seamless Cu conductors are formed by electroplating. Moreover, a semi-additive method is used to fabricate the redistribution layers (RDLs) on the insulating layers of photosensitive PI (PSPI). Notably, a plasma bombardment process is introduced to remove residual PSPI in the contact windows between RDLs and central pillars. Results show that the resistance of a single TSV from a daisy chain of 144 TSVs with density of 2000/mm2 is about 28 mΩ. Additionally, the S-parameters of a single TSV are obtained using L-2L de-embedding technology, and the experimental and simulated results agree well. The proposed low-cost fabrication technologies and the related electrical characterization of PI-TSVs are significant for the application of HAR TSVs in modern heterogeneous integration systems.

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Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

Fabrication of high aspect ratio, non-line-of-sight vias in silicon carbide by a two-photon absorption method

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Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

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Etch the Borosilicate Glass to Form a Straight Through-Glass-via Based on the FLACE Technology

Structure Design Of Through Silicon Via Interconnects And Growth Of Carbon Nanotubes

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

Fabrication of through sapphire vias by femtosecond laser bidirectional drilling

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

High Density Through Silicon Via (TSV)

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

Design and analysis of an I-shaped TSV structure for 3D SiP

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Copper-Based TSV: Interposer